News

2015-06-23 07:51:43 Experimental location of helium atoms in 6H–SiC crystal lattice after implantation and after annealing at 400 °C
2015-05-19 08:25:11Photoelastic characterization of residual strain in GaAs wafers annealed in holders of different geometry
2015-05-07 08:55:56 Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET
2015-04-29 02:19:43Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts
2015-03-03 02:36:43Mechanism of TMAl pre-seeding in AlN epitaxy on Si (111) substrate
2015-02-14 01:46:02Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO2
2015-02-11 08:21:41Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
2015-02-03 01:53:47GaN/sapphire wafers
2015-01-27 06:33:32Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowing
2015-01-12 07:40:05AlN/GaN/AlN heterostructures grown on Si substrate by plasma-assisted MBE for MSM UV photodetector applications