News

2014-02-24 02:24:15Single phase (11-22) GaN on (10-10) sapphire grown by metal-organic vapor phase epitaxy
2014-02-21 02:02:14HVPE GaN for high power electronic Schottky diodes
2014-02-19 03:14:46High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate
2014-02-17 06:06:11Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions
2014-02-11 02:01:15Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates
2014-02-11 01:47:28Comparison of HVPE GaN films and substrates grown on sapphire and on MOCVD GaN epi-layer
2014-01-27 07:25:33Application of flow-kinetics model to the PVT growth of SiC crystals
2014-01-23 09:20:39Growth and characterization of GaAs crystals produced by the VCz method without boric oxide encapsulation
2014-01-20 09:08:26Governing factors for the formation of 4H or 6H-SiC polytype during SiC crystal growth: An atomistic computational approach
2014-01-16 07:43:24Dislocation generation in GaAs crystals grown by the vertical gradient freeze method