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Ge(Germanium) Single Crystals and Wafers

PWAM offers semiconductor materials,Ge(Germanium) Single Crystals and Wafers:

General Properties
General  Properties Structure
Cubic, a = 5.6754 Å
 Density: 5.765 g/cm3
Melting   Point: 937.4 oC
Thermal Conductivity: 640
Crystal Growth Technology
Czochralski
 
Doping  available
Undoped
Sb Doping
Doping In or Ga 
Conductive Type
/
N
P
Resistivity,  cm1
>35
< 0.05
0.05 - 0.1
EPD
< 4x10^3/cm2
< 4x10^3/cm2
< 4x10^3/cm2
 
Crystal Grades and Application
(please specify when you order) Electronic Grade
Used for diodes and transistors
Infrared Grade
Used for IR optical window
Cell Grade
Used for substrates of solar cell 
 
Standard Specs of  Ge Crystal and wafers
Crystal Orientation
<111>,<100> and <110> ± 0.5° or custom orientation
Crystal boule as grown
1" ~ 5" diameter  x  200 mm Length
Standard blank as cut
1"x 0.5mm
2"x0.6mm
4"x0.7mm
5"&6"x0.8mm 
Standard Polished wafer(One/two sides polished) 
1"x 0.30 mm
2"x0.5mm
4"x0.5mm
 5"&6"x0.6mm 
Special size and orientation are available upon requested  Ge Wafers

 

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