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Silicon Carbide Wafers(SiC wafer)PWAM offers semiconductor materials, especially for SiC wafer, SiC substate of polytype 4H and 6H in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology, established a production line to manufacturer SiC substrate and SiC wafer. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China's Semiconductor Lab, we are devoted to continuously improve the quality of SiC wafer, currently substates and develop large size substrates. Our responsibility is to produce the best silicon wafer.
SiC Wafer is a binary compound semiconductor of IV-IV group, and also the only solid compound of IV group in the periodic table of elements. There are more than 250 isomeric types of SiC, therein, the most important of which are β - SiC and α - SiC. β - SiC(3C SiC), and α - SiC is a hexagonal dense fibrous zinc ore structure, including 6h, 4h, 15R, etc. Currently 4H SiC wafer and 6H SiC wafer have been widely used in RF, high power devices and LED
SILICON CARBIDE MATERIAL PROPERTIES
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Polytype
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Single Crystal 4H
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Single Crystal 6H
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Lattice Parameters
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a=3.076 Å
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a=3.073 Å
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c=10.053 Å
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c=15.117 Å
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Stacking Sequence
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ABCB
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ABCACB
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Band-gap
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3.26 eV
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3.03 eV
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Density
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3.21 · 103 kg/m3
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3.21 · 103 kg/m3
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Therm. Expansion Coefficient
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4-5×10-6/K
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4-5×10-6/K
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Refraction Index
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no = 2.719
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no = 2.707
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ne = 2.777
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ne = 2.755
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Dielectric Constant
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9.6
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9.66
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Thermal Conductivity
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490 W/mK
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490 W/mK
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Break-Down Electrical Field
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2 – 4 · 108 V/m
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2 – 4 · 108 V/m
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Saturation Drift Velocity
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2.0 · 105 m/s
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2.0 · 105 m/s
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Electron Mobility
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800 cm2/V·S
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400 cm2/V·S
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hole Mobility
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115 cm2/V·S
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90 cm2/V·S
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Mohs Hardness
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~9
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~9
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6H N-TYPE SIC, 2″WAFER SPECIFICATION
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SUBSTRATE PROPERTY
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S6H-51-N-PWAM-250 S6H-51-N-PWAM-330 S6H-51-N-PWAM-430
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Description
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Production Grade 6H SiC Substrate
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Polytype
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6H
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Diameter
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(50.8 ± 0.38) mm
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Thickness
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(250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
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Carrier Type
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n-type
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Dopant
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Nitrogen
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LResistivity (RT)
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0.02 ~ 0.1 Ω·cm
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Surface Roughness
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< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
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FWHM
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A<30 arcsec B/C/D <50 arcsec
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Micropipe Density
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A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
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Surface Orientation
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On axis
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<0001>± 0.5°
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Off axis
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3.5° toward <11-20>± 0.5°
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Primary flat orientation
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Parallel {1-100} ± 5°
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Primary flat length
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(16 ± 1.7) mm
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Secondary flat orientation
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Si-face:90° cw. from orientation flat ± 5°
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C-face:90° ccw. from orientation flat ± 5°
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Secondary flat length
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(8 ± 1.7) mm
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Surface Finish
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Single or double face polished
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Packaging
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Single wafer box or multi wafer box
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Usable area
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≥ 90 %
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Edge exclusion
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1 mm
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6H SEMI-INSULATING SIC, 2″WAFER SPECIFICATION
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SUBSTRATE PROPERTY
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S6H-51-SI-PWAM-250 S6H-51-SI-PWAM-330 S6H-51-SI-PWAM-430
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Description
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Production Grade 6H SEMI Substrate
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Polytype
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6H
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Diameter
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(50.8 ± 0.38) mm
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Thickness
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(250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
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Resistivity (RT)
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(90% >1E5 Ω·cm
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Surface Roughness
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< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
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FWHM
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A<30 arcsec B/C/D <50 arcsec
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Micropipe Density
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A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
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Surface Orientation
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On axis
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<0001>± 0.5°
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Off axis
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3.5° toward <11-20>± 0.5°
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Primary flat orientation
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Parallel {1-100} ± 5°
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Primary flat length
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(16 ± 1.7) mm
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Secondary flat orientation
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Si-face:90° cw. from orientation flat ± 5°
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C-face:90° ccw. from orientation flat ± 5°
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Secondary flat length
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(8 ± 1.7) mm
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Surface Finish
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Single or double face polished
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Packaging
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Single wafer box or multi wafer box
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Usable area
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≥ 90 %
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Edge exclusion
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1 mm
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6H N-TYPE SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm SiC wafer
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6H N-TYPE SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION: Thickness:330μm/430μm
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4H N-TYPE SIC, 2″WAFER SPECIFICATION
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SUBSTRATE PROPERTY
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S4H-51-N-PWAM-330 S4H-51-N-PWAM-430
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Description
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Polytype
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4H
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Diameter
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(50.8 ± 0.38) mm
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Thickness
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(250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
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Carrier Type
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n-type
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Dopant
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Nitrogen
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Resistivity (RT)
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0.012 - 0.0028 Ω·cm
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Surface Roughness
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< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
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FWHM
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A<30 arcsec B/C/D <50 arcsec
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Micropipe Density
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A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 |
Surface Orientation
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On axis
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<0001>± 0.5°
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Off axis
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4°or 8° toward <11-20>± 0.5°
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Primary flat orientation
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Parallel {1-100} ± 5°
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Primary flat length
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(16 ± 1.7) mm
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Secondary flat orientation
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Si-face:90° cw. from orientation flat ± 5°
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C-face:90° ccw. from orientation flat ± 5°
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Secondary flat length
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(8 ± 1.7) mm
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Surface Finish
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Single or double face polished
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Packaging
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Single wafer box or multi wafer box
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Usable area
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≥ 90 %
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Edge exclusion
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1 mm
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4H SEMI-INSULATING SIC, 2″WAFER SPECIFICATION
SUBSTRATE PROPERTY
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S4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430
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Description
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Production Grade 6H SEMI SiC Wafer Substrate
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Polytype
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4H
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Diameter
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(50.8 ± 0.38) mm
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Thickness
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(250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
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Resistivity (RT)
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(90% >1E5 Ω·cm
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Surface Roughness
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< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
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FWHM
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A<30 arcsec B/C/D <50 arcsec
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Micropipe Density
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A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
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Surface Orientation
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On axis
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<0001>± 0.5°
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Off axis
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3.5° toward <11-20>± 0.5°
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Primary flat orientation
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Parallel {1-100} ± 5°
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Primary flat length
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(16 ± 1.7) mm
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Secondary flat orientation
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Si-face:90° cw. from orientation flat ± 5°
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C-face:90° ccw. from orientation flat ± 5°
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Secondary flat length
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(8 ± 1.7) mm
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Surface Finish
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Single or double face polished
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Packaging
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Single wafer box or multi wafer box
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Usable area
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≥ 90 %
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Edge exclusion
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1 mm
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4H N-TYPE SIC, 3″WAFER SPECIFICATION
SUBSTRATE PROPERTY
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S4H-51-N-PWAM-330S4H-51-N-PWAM-430
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Description
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Production Grade4H SiC Substrate
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Polytype
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4H
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Diameter
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(50.8 ± 0.38) mm
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Thickness
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(250 ± 25) μm(330 ± 25) μm(430 ± 25) μm
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Carrier Type
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n-type
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Dopant
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Nitrogen
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Resistivity (RT)
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0.012 - 0.0028 Ω·cm
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Surface Roughness
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< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
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FWHM
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A<30 arcsec B/C/D <50 arcsec
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Micropipe Density
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A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
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Surface Orientation
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On axis
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<0001>± 0.5°
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Off axis
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4°or 8° toward <11-20>± 0.5°
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Primary flat orientation
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Parallel {1-100} ± 5°
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Primary flat length
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(16 ± 1.7) mm
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Secondary flat orientation
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Si-face:90° cw. from orientation flat ± 5°
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C-face:90° ccw. from orientation flat ± 5°
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Secondary flat length
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(8 ± 1.7) mm
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Surface Finish
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Single or double face polished
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Packaging
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Single wafer box or multi wafer box
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Usable area
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≥ 90 %
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Edge exclusion
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1 mm
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4H SEMI-INSULATING SIC, 3″WAFER SPECIFICATION
SUBSTRATE PROPERTY
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S4H-76-SI-PWAM-350
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Description
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Production Grade 4H SEMI SiC Wafer Substrate
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Polytype
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4H
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Diameter
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(76.2 ± 0.38) mm
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Thickness
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(350 ± 25) μm
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Resistivity (RT)
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(90% >1E5 Ω·cm
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Surface Roughness
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< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
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FWHM
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A<30 arcsec B/C/D <50 arcsec
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Micropipe Density
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A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
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Surface Orientation
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On axis
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<0001>± 0.5°
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Off axis
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3.5° toward <11-20>± 0.5°
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Primary flat orientation
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Parallel {1-100} ± 5°
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Primary flat length
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(16 ± 1.7) mm
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Secondary flat orientation
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Si-face:90° cw. from orientation flat ± 5°
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C-face:90° ccw. from orientation flat ± 5°
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Secondary flat length
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(8 ± 1.7) mm
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Surface Finish
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Single or double face polished
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Packaging
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Single wafer box or multi wafer box
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Usable area
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≥ 90 %
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Edge exclusion
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1 mm
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4H N-TYPE SIC, 4″WAFER SPECIFICATION
SUBSTRATE PROPERTY
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S4H-100-N-PWAM-350S4H-100-N-PWAM-500
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Description
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Production Grade4H SiC Wafer Substrate
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Polytype
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4H
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Diameter
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(100 ± 0.38) mm
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Thickness
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(350 ± 25) μm(500 ± 25) μm
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Carrier Type
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n-type
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Dopant
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Nitrogen
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Resistivity (RT)
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0.015 - 0.028Ω·cm
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Surface Roughness
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< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
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FWHM
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A<30 arcsec B/C/D <50 arcsec
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Micropipe Density
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A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
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TTV/Bow /Warp
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<25μm
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Surface Orientation
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On axis
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<0001>± 0.5°
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Off axis
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4°or 8° toward <11-20>± 0.5°
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Primary flat orientation
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<11-20>±5.0°
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Primary flat length
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22.22 mm±3.17mm
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Secondary flat orientation
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Si-face:90° cw. from orientation flat ± 5°
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C-face:90° ccw. from orientation flat ± 5°
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Secondary flat length
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11 ± 1.7 mm
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Surface Finish
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Single or double face polished
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Packaging
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Single wafer box or multi wafer box
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Scratch
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None
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Usable area
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≥ 90 %
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Edge exclusion
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2mm
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4H SEMI-INSULATING SIC, 4″WAFER SPECIFICATION
SUBSTRATE PROPERTY
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S4H-100-SI-PWAM-500
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Description
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Production Grade 4H SEMI SiC Wafer Substrate
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Polytype
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4H
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Diameter
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(100 ± 0.38) mm
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Thickness
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(500 ± 25) μm
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Resistivity (RT)
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(90% >1E5 Ω·cm
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Surface Roughness
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< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
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FWHM
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A<30 arcsec B/C/D <50 arcsec
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Micropipe Density
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A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
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Surface Orientation
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On axis
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<0001>± 0.5°
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Off axis
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3.5° toward <11-20>± 0.5°
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Primary flat orientation
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Parallel {1-100} ± 5°
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Primary flat length
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(16 ± 1.7) mm
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Secondary flat orientation
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Si-face:90° cw. from orientation flat ± 5°
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C-face:90° ccw. from orientation flat ± 5°
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Secondary flat length
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(8 ± 1.7) mm
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Surface Finish
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Single or double face polished
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Packaging
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Single wafer box or multi wafer box
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Usable area
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≥ 90 %
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Edge exclusion
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1 mm
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4H N-TYPE SIC, 6″WAFER SPECIFICATION
SUBSTRATE PROPERTY
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S4H-100-N-PWAM-350S4H-100-N-PWAM-500
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Description
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Production Grade4H SiC Wafer Substrate
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Polytype
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4H
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Diameter
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(150 ± 0.38) mm
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Thickness
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(350 ± 25) μm(500 ± 25) μm
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Carrier Type
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n-type
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Dopant
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Nitrogen
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Resistivity (RT)
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0.015 - 0.028Ω·cm
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Surface Roughness
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< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
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FWHM
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A<30 arcsec B/C/D <50 arcsec
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Micropipe Density
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A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
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TTV/Bow /Warp
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<25μm
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Surface Orientation
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On axis
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<0001>± 0.5°
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Off axis
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4°or 8° toward <11-20>± 0.5°
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Primary flat orientation
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<11-20>±5.0°
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Primary flat length
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22.22 mm±3.17mm
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Secondary flat orientation
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Si-face:90° cw. from orientation flat ± 5°
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C-face:90° ccw. from orientation flat ± 5°
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Secondary flat length
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11 ± 1.7 mm
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Surface Finish
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Single or double face polished
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Packaging
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Single wafer box or multi wafer box
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Scratch
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None
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Usable area
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≥ 90 %
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Edge exclusion
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2mm
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4H SEMI-INSULATING SIC, 6″WAFER SPECIFICATION
SUBSTRATE PROPERTY
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S4H-150-SI-PWAM-500
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Description
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Production Grade 4H SEMI SiC Wafer Substrate
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Polytype
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4H
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Diameter
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(150 ± 0.38) mm
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Thickness
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(500 ± 25) μm
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Resistivity (RT)
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(90% >1E5 Ω·cm
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Surface Roughness
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< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
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FWHM
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A<30 arcsec B/C/D <50 arcsec
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Micropipe Density
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A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
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Surface Orientation
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On axis
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<0001>± 0.5°
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Off axis
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3.5° toward <11-20>± 0.5°
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Primary flat orientation
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Parallel {1-100} ± 5°
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Primary flat length
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(16 ± 1.7) mm
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Secondary flat orientation
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Si-face:90° cw. from orientation flat ± 5°
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C-face:90° ccw. from orientation flat ± 5°
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Secondary flat length
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(8 ± 1.7) mm
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Surface Finish
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Single or double face polished
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Packaging
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Single wafer box or multi wafer box
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Usable area
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≥ 90 %
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Edge exclusion
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1 mm
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Why is SiC wafer?
1.SiC wafer has a breakdown electric field strength of 10 times that of Si and a thermal conductivity of 3 times that of Si, which makes SiC particularly attractive for high-power and high-temperature devices. For example, under a given blocking voltage, the on state resistance of SiC power device is several orders of magnitude lower than that of Si device, which will greatly improve the power conversion efficiency. The wide band gap and high thermal stability of SiC enable some types of SiC devices to work indefinitely at junction temperature of 300C or higher without measurable performance degradation.
2.In wide band gap semiconductors, SiC is special because it can easily dope p-type or n-type in the range of more than 5 orders of magnitude
3.SiC Wafer is the only compound semiconductor, and its natural oxide is SiO, It is the same insulator as the natural oxide of silicon, which makes it possible to make the whole electronic device based on MOS (metal oxide semiconductor) group with SiC.
4H N-TYPE SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm |
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4H N-TYPE SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION: Thickness:330μm/430μm |
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We are the industry-leading SiC wafer manufacturers, Committed to producing high quality single crystal SiC wafer. |
*We also provide SiC substrate with titanium coating for growth AlGaN/GaN HEMT structure