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III-V Nitrides WaferPWAM offers semiconductor materials,crystal substrate,Which are for III-V nitride Film Deposition,III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications.
Substrates for III-V nitride Film Deposition |
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Crystal
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Structure
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M.P.
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Density
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Lattice Mis-match to GaN
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Thermal Expansion
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Growth Tech. .& Max size
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Standard substrate size (mm)
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oC
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g/cm3
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(10-6/k)
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Hexagonal
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~2700
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3.21
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3.5 %at<0001>ori.
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10.3
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CVD
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Ø2" x 0.3,Ø3"x0.3
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(6H as
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a=3.073Å
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20x20x0.3,15x15x0.3
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example)
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c=15.117Å
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Ø3“
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10x10x0.3,5x5x0.3
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subl.
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1 side epi polished
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Al2O3
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Hexagonal
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2030
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3.97
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14% at<0001>ori.
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7.5
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cz
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Ø50 x 0.33
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a=4.758 Å
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Ø25 x 0.50
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c=12.99 Å
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Ø2”
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10x10x0.5
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1 or 2 sides epi polished
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LiAlO2
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Tetragonal
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1900 ~
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2.62
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1.4 % at<100>ori.
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/
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cz
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10x10x0.5
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a=5.17 Å
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Ø20 mm
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1 or 2 sides epi polished
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c=6.26 Å
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LiGaO2
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Orthor.
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1600
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4.18
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0.2% at<001>ori.
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7.5
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cz
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Ø50 x 0.33
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a=5.406 Å
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Ø20 mm
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Ø25 x 0.50
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b=5.012Å
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10x10x0.5
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c=6.379 Å
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1 or 2 sides epi polished
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MgO
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Cubic
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2852
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3.58
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3% at<111>ori.
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12.8
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Flux
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2”x2”x 0.5 ,Ø2” x 0.5
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a=4.216 Å
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1”x1”x 0.5 ,Ø1” x 0.5
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Ø2"
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10 x10x0.5
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1 or 2 sides epi polished
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MgAl2O4
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Cubic
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2130
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3.6
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9% at<111>ori.
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7.45
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cz
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Ø2" x 0.5
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a=8.083 Å
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10x10x0.5
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Ø2”
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1 or 2 sides epi polished
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ZnO
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Hexag.
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1975
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5.605
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2.2% at<0001>ori.
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2.9
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Hydro-thermal
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20x20x0.5
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a=3.325 Å
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20mm
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1 or 2 sides epi polished
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c=5.213 Å
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Ø3“
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10x10x0.3,5x5x0.3
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Hexagonal
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6.15
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5.59
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10x10x0.475
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a=4.758 Å
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5x5x0.475
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