>
Semiconductor Materials
No.
|
Group
|
Elem.
|
Material
|
Formula
|
Band gap(eV)
|
Gap type
|
No.1
|
III-V
|
2
|
AlN
|
6.28
|
direct
|
|
No.2
|
III-V
|
2
|
Aluminium arsenide
|
AlAs
|
2.16
|
indirect
|
No.3
|
III-V
|
2
|
GaSb
|
0.726
|
direct
|
|
No.4
|
III-V
|
2
|
GaAs
|
1.43
|
direct
|
|
No.5
|
III-V
|
2
|
GaN
|
3.44
|
direct
|
|
No.6
|
III-V
|
2
|
GaP
|
2.26
|
indirect
|
|
No.7
|
III-V
|
2
|
InSb
|
0.17
|
direct
|
|
No.8
|
III-V
|
2
|
InAs
|
0.36
|
direct
|
|
No.9
|
III-V
|
2
|
Indium nitride
|
InN
|
0.7
|
direct
|
No.10
|
III-V
|
2
|
InP
|
1.35
|
direct
|
|
No.11
|
III-V
|
2
|
Aluminium antimonide
|
AlSb
|
1.6/2.2
|
indirect/direct
|
No.12
|
III-V
|
2
|
Aluminium phosphide
|
AlP
|
2.45
|
indirect
|
No.13
|
III-V
|
2
|
Boron arsenide
|
BAs
|
1.5
|
indirect
|
No.14
|
III-V
|
2
|
Boron arsenide
|
B12As2
|
3.47
|
indirect
|
No.15
|
III-V
|
2
|
Boron nitride, cubic
|
BN
|
6.36
|
indirect
|
No.16
|
III-V
|
2
|
Boron nitride, hexagonal
|
BN
|
5.96
|
quasi-direct
|
No.17
|
III-V
|
2
|
Boron nitride,nanotube
|
BN
|
~5.5
|
|
No.18
|
III-V
|
2
|
Boron phosphide
|
BP
|
2
|
indirect
|
No.19
|
III-V
|
3
|
AlxGa1-xAs
|
1.42
|
direct/indirect
|
|
No.20
|
III-V
|
3
|
InxGa1-xAs
|
0.36
|
direct
|
|
No.21
|
III-V
|
3
|
Indium gallium phosphide
|
InxGa1-xP
|
1.35
|
direct/indirect
|
No.22
|
III-V
|
3
|
Aluminium indium arsenide
|
AlxIn1-xAs
|
0.36
|
direct/indirect
|
No.23
|
III-V
|
3
|
Aluminium indium antimonide
|
AlxIn1-xSb
|
|
|
No.24
|
III-V
|
3
|
Gallium arsenide nitride
|
GaAsN
|
|
|
No.25
|
III-V
|
3
|
Gallium arsenide phosphide
|
GaAsP
|
1.43
|
direct/indirect
|
No.26
|
III-V
|
3
|
Gallium arsenide antimonide
|
GaAsSb
|
0.7
|
direct
|
No.27
|
III-V
|
3
|
AlGaN
|
3.44
|
direct
|
|
No.28
|
III-V
|
3
|
Aluminium gallium phosphide
|
AlGaP
|
2.26
|
indirect
|
No.29
|
III-V
|
3
|
InGaN
|
2
|
direct
|
|
No.30
|
III-V
|
3
|
Indium arsenide antimonide
|
InAsSb
|
|
|
No.31
|
III-V
|
3
|
Indium gallium antimonide
|
InGaSb
|
|
|
No.32
|
III-V
|
4
|
Aluminium gallium indium phosphide
|
AlGaInP
|
|
direct/indirect
|
No.33
|
III-V
|
4
|
Aluminium gallium arsenide phosphide
|
AlGaAsP
|
|
|
No.34
|
III-V
|
4
|
Indium gallium arsenide phosphide
|
InGaAsP
|
|
|
No.35
|
III-V
|
4
|
Indium gallium arsenide antimonide
|
InGaAsSb
|
|
|
No.36
|
III-V
|
4
|
Indium arsenide antimonide phosphide
|
InAsSbP
|
|
|
No.37
|
III-V
|
4
|
Aluminium indium arsenide phosphide
|
AlInAsP
|
|
|
No.38
|
III-V
|
4
|
Aluminium gallium arsenide nitride
|
AlGaAsN
|
|
|
No.39
|
III-V
|
4
|
Indium gallium arsenide nitride
|
InGaAsN
|
|
|
No.40
|
III-V
|
4
|
Indium aluminium arsenide nitride
|
InAlAsN
|
|
|
No.41
|
III-V
|
4
|
Gallium arsenide antimonide nitride
|
GaAsSbN
|
|
|
No.42
|
III-V
|
5
|
Gallium indium nitride arsenide antimonide
|
GaInNAsSb
|
|
|
No.43
|
III-V
|
5
|
Gallium indium arsenide antimonide phosphide
|
GaInAsSbP
|
|
|
No.44
|
IV
|
2
|
Silicon carbide, 3C-SiC
|
SiC
|
2.3
|
indirect
|
No.45
|
IV
|
2
|
SiC
|
3.3
|
indirect
|
|
No.46
|
IV
|
2
|
SiC
|
3
|
indirect
|
|
No.47
|
IV
|
1
|
Ge
|
0.67
|
indirect
|
|
No.48
|
IV
|
1
|
Silicon
|
Si
|
1.11
|
indirect
|
No.49
|
IV
|
1
|
Diamond
|
C
|
5.47
|
indirect
|
No.50
|
IV
|
1
|
Gray tin, α-Sn
|
Sn
|
0.00, 0.08
|
indirect
|
No.51
|
|
|
|
|
|
|
No.52
|
IV-VI
|
2
|
Lead selenide
|
PbSe
|
0.27
|
direct
|
No.53
|
IV-VI
|
2
|
Lead telluride
|
PbTe
|
0.32
|
|
No.54
|
IV-VI
|
3
|
Lead tin telluride
|
PbSnTe
|
|
|
No.55
|
IV-VI
|
2
|
Lead(II) sulfide
|
PbS
|
0.37
|
|
No.56
|
IV-VI
|
3
|
Thallium germanium telluride
|
Tl2GeTe5
|
|
|
No.57
|
IV-VI
|
3
|
Thallium tin telluride
|
Tl2SnTe5
|
|
|
No.58
|
IV-VI
|
2
|
Tin sulfide
|
SnS
|
1
|
indirect
|
No.59
|
IV-VI
|
2
|
Tin sulfide
|
SnS2
|
2.2
|
|
No.60
|
IV-VI
|
2
|
Tin telluride
|
SnTe
|
|
|
No.61
|
Layered
|
2
|
Bismuth sulfide
|
Bi2S3
|
|
|
No.62
|
Layered
|
2
|
Gallium selenide
|
GaSe
|
2.1
|
indirect
|
No.63
|
Layered
|
2
|
Lead(II) iodide
|
PbI2
|
|
|
No.64
|
Layered
|
2
|
Molybdenum disulfide
|
MoS2
|
|
|
No.65
|
Layered
|
2
|
Tin sulfide
|
SnS
|
|
|
No.66
|
Magnetic
|
2
|
Chromium(III) bromide
|
CrBr3
|
|
|
No.67
|
Magnetic
|
2
|
Europium(II) oxide
|
EuO
|
|
|
No.68
|
Magnetic
|
2
|
Europium(II) sulfide
|
EuS
|
|
|
No.69
|
Magnetic
|
2
|
Iron(II) oxide
|
FeO
|
|
|
No.70
|
Magnetic
|
4
|
Lanthanum calcium manganate
|
La0.7Ca0.3MnO3
|
|
|
No.71
|
Magnetic
|
2
|
Nickel(II) oxide
|
NiO
|
|
|
No.72
|
Magnetic,diluted
|
3
|
Cadmium manganese telluride
|
CdMnTe
|
|
|
No.73
|
Magnetic,diluted
|
3
|
Indium manganese arsenide
|
InMnAs
|
|
|
No.74
|
Magnetic,diluted
|
3
|
Lead manganese telluride
|
PbMnTe
|
|
|
No.75
|
Magnetic,diluted
|
3
|
Gallium manganese arsenide
|
GaMnAs
|
|
|
No.76
|
Oxide
|
3
|
Barium titanate
|
BaTiO3
|
3
|
|
No.77
|
Oxide
|
2
|
Bismuth trioxide
|
Bi2O3
|
|
|
No.78
|
Oxide
|
2
|
Copper(I) oxide
|
Cu2O
|
2.17
|
|
No.79
|
Oxide
|
2
|
Copper(II) oxide
|
CuO
|
1.2
|
|
No.80
|
Oxide
|
3
|
Lanthanum copper oxide
|
La2CuO4
|
2
|
|
No.81
|
Oxide
|
3
|
Lithium niobate
|
LiNbO3
|
4
|
|
No.82
|
Oxide
|
3
|
Strontium titanate
|
SrTiO3
|
3.3
|
|
No.83
|
Oxide
|
2
|
Tin dioxide
|
SnO2
|
3.7
|
|
No.84
|
Oxide
|
2
|
Titanium dioxide,anatase
|
TiO2
|
3.2
|
indirect
|
No.85
|
Oxide
|
2
|
Titanium dioxide,brookite
|
TiO2
|
2.96
|
|
No.86
|
Oxide
|
2
|
Titanium dioxide, rutile
|
TiO2
|
3.02
|
direct
|
No.87
|
Oxide
|
2
|
Uranium dioxide
|
UO2
|
1.3
|
|
No.88
|
Oxide
|
2
|
Uranium trioxide
|
UO3
|
|
|
No.89
|
V-VI, layered
|
2
|
Bismuth telluride
|
Bi2Te3
|
|
|
No.90
|
VI
|
1
|
Gray selenium
|
Se
|
1.74
|
|
No.91
|
VI
|
1
|
Sulfur, α-S
|
S8
|
2.6
|
|
No.92
|
VI
|
1
|
Tellurium
|
Te
|
0.33
|
|
No.93
|
IV
|
2
|
Silicon-germanium
|
Si1-xGex
|
0.67
|
indirect
|
No.94
|
I-VI
|
2
|
Copper sulfide
|
Cu2S
|
1.2
|
direct
|
No.95
|
I-VII
|
2
|
Cuprous chloride
|
CuCl
|
3.4
|
direct
|
No.96
|
II-V
|
2
|
Cadmium antimonide
|
Cd3Sb2
|
|
|
No.97
|
II-V
|
2
|
Cadmium arsenide
|
Cd3As2
|
0.14
|
|
No.98
|
II-V
|
2
|
Cadmium phosphide
|
Cd3P2
|
|
|
No.99
|
II-V
|
2
|
Zinc antimonide
|
Zn3Sb2
|
|
|
No.100
|
II-V
|
2
|
Zinc arsenide
|
Zn3As2
|
|
|
No.101
|
II-V
|
2
|
Zinc phosphide
|
Zn3P2
|
|
|
No.102
|
II-VI
|
2
|
Cadmium selenide
|
CdSe
|
1.74
|
direct
|
No.103
|
II-VI
|
2
|
Cadmium sulfide
|
CdS
|
2.42
|
direct
|
No.104
|
II-VI
|
2
|
Cadmium telluride
|
CdTe
|
1.49
|
|
No.105
|
II-VI
|
2
|
Zinc selenide
|
ZnSe
|
2.7
|
direct
|
No.106
|
II-VI
|
2
|
Zinc sulfide
|
ZnS
|
3.54/3.91
|
direct
|
No.107
|
II-VI
|
2
|
Zinc telluride
|
ZnTe
|
2.25
|
direct
|
No.108
|
II-VI, oxide
|
2
|
Zinc oxide
|
ZnO
|
3.37
|
direct
|
No.109
|
II-VI
|
3
|
CdZnTe
|
1.4
|
direct
|
|
No.110
|
II-VI
|
3
|
Mercury cadmium telluride
|
HgCdTe
|
0
|
|
No.111
|
II-VI
|
3
|
Mercury zinc telluride
|
HgZnTe
|
0
|
|
No.112
|
II-VI
|
3
|
Mercury zinc selenide
|
HgZnSe
|
|
|
No.113
|
other
|
2
|
Arsenic sulfide
|
As2S3
|
|
|
No.114
|
other
|
2
|
Bismuth(III) iodide
|
BiI3
|
|
|
No.115
|
other
|
3
|
Copper indium selenide, CIS
|
CuInSe2
|
1
|
direct
|
No.116
|
other
|
4
|
Copper zinc tin sulfide, CZTS
|
Cu2ZnSnS4
|
1.49
|
direct
|
No.117
|
other
|
2
|
Iron disulfide
|
FeS2
|
0.95
|
|
No.118
|
other
|
2
|
Mercury(II) iodide
|
HgI2
|
|
|
No.119
|
other
|
2
|
Platinum silicide
|
PtSi
|
|
|
No.120
|
other
|
3
|
Silver gallium sulfide
|
AgGaS2
|
|
|
No.121
|
other
|
2
|
Silver sulfide
|
Ag2S
|
0.9
|
|
No.122
|
other
|
2
|
Thallium(I) bromide
|
TlBr
|
|
|
No.123
|
other
|
3
|
Zinc silicon phosphide
|
ZnSiP2
|
|
|
No.124
|
other
|
4
|
Copper indium gallium selenide, CIGS
|
Cu(In,Ga)Se2
|
1
|
direct
|
No.1 AlN: AlN are usable for ultraviolet LEDs. Inefficient emission at 210 nm was achieved on AlN.
No.3 GaSb:N type/Te doped,P type/Zn doped,undoped,used for infrared detectors and LEDs and thermophotovoltaics.
No.4 GaAs:N type/Si doped,P type/Zn doped,undoped,used as substrate for other III-V semiconductors,P-type CMOS transistors unfeasible.Used for near-IR LEDs, fast electronics, and high-efficiency solar cells. Very similar lattice constant togermanium, can be grown on germanium substrates.
No.5 GaN:N type/Si doped,undoped,P type/Mg doped,problematic to be doped to p-type, p-doping with Mg and annealing allowed first high-efficiency blue LEDs and blue lasers. Very sensitive to ESD. Insensitive to ionizing radiation, suitable for spacecraft solar panels. GaN transistors can operate at higher voltages and higher temperatures than GaAs, used in microwave power amplifiers.
No.6 GaP:N type/S or Te doped,P type/Zn doped,used in early low to medium brightness cheap red/orange/green LEDs. Used standalone or with GaAsP. Transparent for yellow and red light, used as substrate for GaAsP red/yellow LEDs.
No.7 InSb:N type/Te doped,P type/Ge doped,undoped,Used in infrared detectors and thermal imaging sensors, high quantum efficiency, low stability, require cooling, used in military long-range thermal imager systems. AlInSb-InSb-AlInSb structure used as quantum well. Very high electron mobility, electron velocity and ballistic length. Transistors can operate below 0.5V and above 200 GHz. Terahertz frequencies maybe achievable.
No.8 InAs:N type/S or Te doped,P type/Zn doped,undoped,Used for infrared detectors for 1–3.8 µm, cooled or uncooled. High electron mobility. InAs dots in InGaAs matrix can serve as quantum dots. Quantum dots may be formed from a monolayer of InAs on InP or GaAs. Strong photo-Dember emitter, used as a terahertz radiation source.
No.9 InN: Possible use in solar cells, but p-type doping difficult. Used frequently as alloys.
No.10 InP: N type/S or Te doped,P type/Zn doped,undoped,commonly used as substrate for epitaxial InGaAs. Superior electron veloxity, used in high-power and high-frequency applications. Used in optoelectronics.
No.13 BAs: Resistant to radiation damage, possible applications in betavoltaics.
No.14 B12As2: Resistant to radiation damage, possible applications in betavoltaics.
No.15 BN: potentially useful for ultraviolet LEDs
No.16 BN: potentially useful for ultraviolet LEDs
No.19 AlxGa1-xAs: direct band gap for x<0.4 (corresponding to 1.42–1.95 eV); can be lattice-matched to GaAs substrate over entire composition range; tends to oxidize; n-doping with Si, Se, Te; p-doping with Zn, C, Be, Mg. Can be used for infrared laser diodes. Used as a barrier layer in GaAs devices to confine electrons to GaAs (see e.g. QWIP). AlGaAs with composition close to AlAs is almost transparent to sunlight. Used in GaAs/AlGaAs solar cells.
No.20 InxGa1-xAs: Well-developed material. Can be lattice matched to InP substrates. Use in infrared technology and thermophotovoltaics. Indium content determines charge carrier density. For x=0.015, InGaAs perfectly lattice-matches germanium; can be used in multijunction photovoltaic cells. Used in infrared sensors, avalanche photodiodes, laser diodes, optical fiber communication detectors, and short-wavelength infrared cameras.
No.21 InxGa1-xP: used for HEMT and HBT structures and high-efficiency multijunction solar cells for e.g. satellites. Ga0.5In0.5P is almost lattice-matched to GaAs, with AlGaIn used for quantum wells for red lasers.
No.22 AlxIn1-xAs:Buffer layer in metamorphic HEMT transistors, adjusting lattice constant between GaAs substrate and GaInAs channel. Can form layered heterostructures acting as quantum wells, in e.g. quantum cascade lasers.
No.25 GaAsP:Used in red, orange and yellow LEDs. Often grown on GaP. Can be doped with nitrogen.
No.27 AlGaN:Used in blue laser diodes, ultraviolet LEDs (down to 250 nm), and AlGaN/GaN HEMTs. Can be grown on sapphire. Used in heterojunctions with AlN and GaN.
No.28 AlGaP:Used in some green LEDs.
No.29 InGaN:InxGa1–xN, x usually between 0.02–0.3 (0.02 for near-UV, 0.1 for 390 nm, 0.2 for 420 nm, 0.3 for 440 nm). Can be grown epitaxially on sapphire, SiC wafers or silicon. Used in modern blue and green LEDs, InGaN quantum wells are effective emitters from green to ultraviolet. Insensitive to radiation damage, possible use in satellite solar cells. Insensitive to defects, tolerant to lattice mismatch damage. High heat capacity.
No.32 AlGaInP:also InAlGaP, InGaAlP, AlInGaP; for lattice matching to GaAs substrates the In mole fraction is fixed at about 0.48, the Al/Ga ratio is adjusted to achieve band gaps between about 1.9 and 2.35 eV; direct or indirect band gaps depending on the Al/Ga/In ratios; used for waveengths between 560–650 nm; tends to form ordered phases during deposition, which has to be prevented
No.35 InGaAsSb:Use in thermophotovoltaics.
No.36 InAsSbP:Use in thermophotovoltaics.
No.43 GaInAsSbP:Can be grown on InAs, GaSb, and other substrates. Can be lattice matched by varying composition. Possibly usable for mid-infrared LEDs.
No.44 SiC:used for early yellow LEDs
No.46 SiC:used for early blue LEDs
No.47 Ge:N type/Sb doped,undoped,P type/Ga doped,used in early radar detection diodes and first transistors; requires lower purity than silicon. A substrate for high-efficiency multijunction photovoltaic cells. Very similar lattice constant togallium arsenide. High-purity crystals used for gamma spectroscopy. May grow whiskers, which impair reliability of some devices.
No.48 Si:N type/p doped,P type/b doped,undoped,most common semiconductor, easy to fabricate. Good electrical and mechanical properties. Forms high quality thermal oxide for insulation purposes.
No.49 C:Excellent thermal conductivity. Superior mechanical and optical properties. Extremely high mechanical quality factor.
No.50 Sn:Low temperature allotrope (diamond cubic lattice).
No.52 PbSe:Used in infrared detectors for thermal imaging. Nanocrystals usable as quantum dots.
No.53 PbTe:Low thermal conductivity, good thermoelectric material.
No.54 PbSnTe:Used in infrared detectors and for thermal imaging.
No.55 PbS:Mineral galena, first semiconductor in practical use, used in cat's whisker detectors; the detectors are slow due to high dielectric constant of PbS. Oldest material used in infrared detectors. At room temperature can detect SWIR, longer wavelengths require cooling.
No.60 SnTe:Complex band structure.
No.62 GaSe:Photoconductor. Uses in nonlinear optics.
No.67 EuO:ferromagnetic
No.68 EuS:ferromagnetic
No.69 FeO:antiferromagnetic
No.70 La0.7Ca0.3MnO3: colossal magnetoresistance
No.71 NiO: antiferromagnetic
No.76 BaTiO3: Ferroelectric, piezoelectric. Used in some uncooled thermal imagers. Used in nonlinear optics.
No.77 Bi2O3: Ionic conductor, applications in fuel cells.
No.78 Cu2O: One of the most studied semiconductors. Many applications and effects first demonstrated with it. Formerly used in rectifier diodes, before silicon.
No.79 CuO: P-type semiconductor.
No.80 La2CuO4: superconductive when doped with barium or strontium
No.81 LiNbO3:SAW grade and optical grade,ferroelectric, piezoelectric, shows Pockels effect. Wide uses in electrooptics and photonics.
No.82 SrTiO3: Ferroelectric, piezoelectric. Used in varistors. Conductive when niobium-doped.
No.83 SnO2: Oxygen-deficient n-type semiconductor. Used in gas sensors.
No.84 TiO2: photocatalytic, n-type
No.86 TiO2: photocatalytic, n-type
No.87 UO2: High Seebeck coefficient, resistant to high temperatures, promising thermoelectric andthermophotovoltaic applications. Formerly used in URDOX resistors, conducting at high temperature. Resistant to radiation damage.
No.89 Bi2Te3: Efficient thermoelectric material when alloyed with selenium or antimony. Narrow-gap layered semiconductor. High electrical conductivity, low thermal conductivity.
No.90 Se: Used in selenium rectifiers.
No.93 Si1-xGex: adjustable band gap, allows construction of heterojunction structures. Certain thicknesses ofsuperlattices have direct band gap.
No.94 Cu2S: p-type, Cu2S/CdS was the first efficient thin film solar cell
No.97 Cd3As2 : N-type intrinsic semiconductor. Very high electron mobility. Used in infrared detectors, photodetectors, dynamic thin-film pressure sensors, and magnetoresistors.
No.99 Zn3Sb2: Used in infrared detectors and thermal imagers, transistors, and magnetoresistors.
No.102 CdSe: Nanoparticles used as quantum dots. Intrinsic n-type, difficult to dope p-type, but can be p-type doped with nitrogen. Possible use in optoelectronics. Tested for high-efficiency solar cells.
No.103 CdS: Used in photoresistors and solar cells; CdS/Cu2S was the first efficient solar cell. Used in solar cells with CdTe. Common as quantum dots. Crystals can act as solid-state lasers. Electroluminescent. When doped, can act as a phosphor.
No.104 CdTe: Used in solar cells with CdS. Used in thin film solar cells and other cadmium telluride photovoltaics; less efficient than polysilicon but cheaper. High electro-optic effect, used in electro-optic modulators. Fluorescent at 790 nm. Nanoparticles usable as quantum dots.
No.105 ZnSe: Used for blue lasers and LEDs. Easy to n-type doping, p-type doping is difficult but can be done with e.g. nitrogen. Common optical material in infrared optics.
No.106 ZnS: Band gap 3.54 eV (cubic), 3.91 (hexagonal). Can be doped both n-type and p-type. Common scintillator/phosphor when suitably doped.
No.107 ZnTe: Can be grown on AlSb, GaSb, InAs, and PbSe. Used in solar cells, compoments of microwave generators, blue LEDs and lasers. Used in electrooptics. Together with lithium niobate used to generate terahertz radiation.
No.108 ZnO: Photocatalytic. Bandwidth tunable from 3 to 4 eV by alloying with magnesium oxide and cadmium oxide. Intrinsic n-type, p-type doping is difficult. Heavy aluminium, indium, or gallium doping yields transparent conductive coatings; ZnO:Al is used as window coatings transparent in visible and reflective in infrared region and as conductive films in LCD displays and solar panels as a replacement of indium tin oxide. Resistant to radiation damage. Possible use in LEDs and laser diodes. Possible use in random lasers.
No.109 CdZnTe: Efficient solid-state x-ray and gamma-ray detector, can operate at room temperature. Highelectro-optic coefficient. Used in solar cells. Can be used to generate and detect terahertz radiation. Can be used as a substrate for epitaxial growth of HgCdTe.
No.110 HgCdTe: Known as "MerCad". Extensive use in sensitive cooled infrared imaging sensors, infrared astronomy, and infrared detectors. Alloy of mercury telluride (a semimetal, zero band gap) and CdTe. High electron mobility. The only common material capable of operating in both 3–5 µm and 12–15 µm atmospheric windows. Can be grown on CdZnTe.
No.111 HgZnTe: Used in infrared detectors, infrared imaging sensors, and infrared astronomy. Better mechanical and thermal properties than HgCdTe but more difficult to control the composition. More difficult to form complex heterostructures.
No.113 As2S3: semiconductive in both crystalline and glassy state
No.116 Cu2ZnSnS4: Cu2ZnSnS4 is derived from CIGS, replacing the Indium/Gallium with earth abundant Zinc/Tin.
No.117 FeS2: Mineral pyrite. Used in later cat's whisker detectors, investigated for solar cells.
No.118 HgI2: Used in some gamma-ray and x-ray detectors and imaging systems operating at room temperature.
No.119 PtSi: Used in infrared detectors for 1–5 µm. Used in infrared astronomy. High stability, low drift, used for measurements. Low quantum efficiency.
No.120 AgGaS2: nonlinear optical properties
No.122 TlBr: Used in some gamma-ray and x-ray detectors and imaging systems operating at room temperature. Used as a real-time x-ray image sensor.
No.124 Cu(In,Ga)Se2: CuInxGa1–xSe2. Polycrystalline. Used in thin film solar cells.