GaN Wafer
PAM-XIAMEN specializes in GaN-based ultra high brightness blue and green light emitting diodes (LED)
and laser diodes (LD),also offer Gallium Nitride free-standing wafer and GaN Templates(GaN-on-sapphire).
Here shows detail specification:
Download GaN Wafer Specification hereGaN on Al2O3-2” epi wafer Specification(LED Epiwafer)
White： 445～460 nm
Blue：465～475 nm
Green：510～530 nm
1. Growth Technique - MOCVD
2. Diameter: 50.8mm
3. Substrate material: Patterned Sapphire Substrate(Al2O3)
4. Pattern size: 3X2X1.5μm
5. Structure:
| Structure layers | Thickness(μm) |
|---|---|
| p-GaN | 0.2 |
| p-AlGaN | 0.03 |
| InGaN/GaN(active area) | 0.2 |
| n-GaN | 2.5 |
| u- GaN | 2 |
| Al2O3 (Substrate) | 430 |
6.Parameters to make chips:
| Item | Color | Chip Size | Characteristics | Appearance | Application |
|---|---|---|---|---|---|
| Lighting | |||||
| Vf = 2.8~3.4V |  |
LCD backlight | |||
| PAM1023A01 | Blue | 10mil x 23mil | Po = 18~25mW | Mobile appliances | |
| Wd = 450~460nm | Consumer electronic | ||||
| Vf = 2.8~3.4V |  |
General lighting | |||
| PAM454501 | Blue | 45mil x 45mil | Po = 250~300mW | LCD backlight | |
| Wd = 450~460nm | Outdoor display |
*If you need to know more detail information of Blue LED Chip, please contact with our sales departments
7.Application:
Lighting
LCD back light
Mobile appliances
Consumer electronic
2" GaN Template
| Item | PAM-GaNT-N | PAM-GaNT-SI |
|---|---|---|
| Conduction Type | N-type | Semi-insulating |
| Size | 2"(50mm) dia. | |
| Thickness | 20um,30um | 30um,90um |
| Orientation | C-axis(0001)+/-1O | |
| Resistivity(300K) | <0.05Ω·cm | >1x106Ω·cm |
| Dislocation Density | <1x108cm-2 | |
| Substrate Structure | Thick GaN on Sapphire(0001) | |
| Surface Finish | Double Side Polished,epi-ready | |
| Usable Area | ≥ 90 % | |
2"GaN Free-standing Wafer
| Item | PAM-GaN50-N | PAM-GaN50-SI |
|---|---|---|
| Conduction Type | N-type | Semi-insulating |
| Size | 2"(50mm) dia. | |
| Thickness | 230+/-20um, 280+/-20um | |
| Orientation | C-axis(0001)+/-1O | |
| Resistivity(300K) | <0.05Ω·cm | >1x106Ω·cm |
| Dislocation Density | <5x106cm-2 | |
| Marco Defect Density | <5cm-2 | |
| Surface Finish | Double Side Polished,RMS<2nm,N-Face RMS<1μm,epi-ready | |
| Usable Area | ≥ 90 % | |
10mm*10.5mm,GaN Free-standing Wafer
| Item | PAM-GaN50-N | PAM-GaN50-SI |
|---|---|---|
| Conduction Type | N-type | Semi-insulating |
| Size | 10mmx10.5mm | |
| Thickness | 230+/-20um, 280+/-20um | |
| Orientation | C-axis(0001)+/-1O | |
| Resistivity(300K) | <0.05Ω·cm | >1x106Ω·cm |
| Dislocation Density | <5x106cm-2 | |
| Marco Defect Density | <5cm-2 or 5-10cm-2 | <5cm-2 |
| Surface Finish | Double Side Polished,RMS<2nm,N-Face RMS<1μm,epi-ready | |
| Usable Area | ≥ 90 % | |
*We also offer 5mm*5mm,GaN Free-standing Wafer
