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GaN WaferPAM-XIAMEN specializes in GaN-based ultra high brightness blue and green light emitting diodes (LED)
and laser diodes (LD),also offer Gallium Nitride free-standing wafer and GaN Templates(GaN-on-sapphire).
GaN on Al2O3-2” epi wafer Specification(LED Epiwafer)
White: 445~460 nm
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Blue:465~475 nm
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Green:510~530 nm
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Structure layers
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Thickness(μm)
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p-GaN
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0.2
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p-AlGaN
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0.03
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InGaN/GaN(active area)
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0.2
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n-GaN
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2.5
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u- GaN
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2
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Al2O3 (Substrate)
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430
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Item
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Color
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Chip Size
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Characteristics
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Appearance
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Application
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Lighting
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Vf = 2.8~3.4V
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LCD backlight
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PAM1023A01
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Blue
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10mil x 23mil
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Po = 18~25mW
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Mobile appliances
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Wd = 450~460nm
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Consumer electronic
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Vf = 2.8~3.4V
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General lighting
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PAM454501
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Blue
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45mil x 45mil
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Po = 250~300mW
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LCD backlight
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Wd = 450~460nm
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Outdoor display
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2" GaN Template
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Item
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PAM-GaNT-N
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PAM-GaNT-SI
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Conduction Type
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N-type
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Semi-insulating
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Size
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2"(50mm) dia.
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Thickness
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20um,30um
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30um,90um
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Orientation
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C-axis(0001)+/-1°
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Resistivity(300K)
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<0.05Ω·cm
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>1x10^6Ω·cm
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Dislocation Density
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<1x10^8cm²
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Substrate Structure
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Thick GaN on Sapphire(0001)
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Surface Finish
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Double Side Polished,epi-ready
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Usable Area
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≥ 90 %
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Item
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PAM-GaN50-N
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PAM-GaN50-SI
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Conduction Type
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N-type
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Semi-insulating
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Size
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2"(50mm) dia.
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Thickness
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230+/-20um, 280+/-20um
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Orientation
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C-axis(0001)+/-1°
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Resistivity(300K)
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<0.05Ω·cm
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>1x10^6Ω·cm
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Dislocation Density
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<5x10^5cm²
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Marco Defect Density
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<5cm²
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Surface Finish
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Double Side Polished,RMS<2nm,N-Face RMS<1μm,epi-ready
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Usable Area
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≥ 90 %
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10mm*10.5mm,GaN Free-standing Wafer
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Item
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PAM-GaN50-N
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PAM-GaN50-SI
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Conduction Type
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N-type
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Semi-insulating
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Size
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10mmx10.5mm
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Thickness
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230+/-20um, 280+/-20um
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Orientation
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C-axis(0001)+/-1°
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Resistivity(300K)
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<0.05Ω·cm
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>1x10^6Ω·cm
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Dislocation Density
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<5x10^5cm²
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Marco Defect Density
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<5cm² or 5-10cm²
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<5cm²
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Surface Finish
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Double Side Polished,RMS<2nm,N-Face RMS<1μm,epi-ready
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Usable Area
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≥ 90 %
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*We also offer dia.45mm, dia 1", and 5mm*5mm,GaN Free-standing Wafer.
*We offer GaN free-standing LED grade and LD grade both.
* 5*5mm,10*10mm or custom size, GaN on sapphire,(0001), n type Si doped or undoped, 3-5um are available.
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*For more information of GaN substrate, please see:Properties of GaN substrate