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III-V Nitrides Wafer

PWAM offers semiconductor materials,crystal substrate,Which are for III-V nitride Film Deposition,III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications.

Substrates for III-V nitride Film Deposition

Crystal
Structure
M.P.
Density
Lattice Mis-match to GaN
Thermal Expansion
Growth Tech. .& Max size
Standard substrate size (mm)
oC
g/cm3
(10-6/k)
Hexagonal
~2700
3.21
3.5 %at<0001>ori.
10.3
CVD
Ø2" x 0.3,Ø3"x0.3
(6H as
a=3.073Å
 
 
 
 
 
20x20x0.3,15x15x0.3
example)
c=15.117Å
 
 
 
 
Ø3“
10x10x0.3,5x5x0.3
 
 
subl.
 
 
 
 
1 side epi polished
Al2O3
Hexagonal
2030
3.97
14% at<0001>ori.
7.5
cz
Ø50 x 0.33
a=4.758 Å
 
 
 
 
 
Ø25 x 0.50
c=12.99 Å
 
 
 
 
Ø2”
10x10x0.5
 
 
 
 
 
 
1 or 2 sides epi polished
LiAlO2
Tetragonal
1900 ~
2.62
1.4 % at<100>ori.
/
cz
10x10x0.5
a=5.17 Å
 
 
 
 
Ø20 mm
1 or 2 sides epi polished
c=6.26 Å
 
 
 
 
 
 
LiGaO2
Orthor.
1600
4.18
0.2% at<001>ori.
7.5
cz
Ø50 x 0.33
a=5.406 Å
 
 
 
 
Ø20 mm
Ø25 x 0.50
b=5.012Å
 
 
 
 
 
10x10x0.5
c=6.379 Å
 
 
 
 
 
1 or 2 sides epi polished
MgO
Cubic
2852
3.58
3% at<111>ori.
12.8
Flux
2”x2”x 0.5 ,Ø2” x 0.5 
a=4.216 Å
 
 
 
 
 
1”x1”x 0.5 ,Ø1” x 0.5 
 
 
 
 
 
Ø2"
10 x10x0.5 
 
 
 
 
 
 
1 or 2 sides epi polished
MgAl2O4
Cubic
2130
3.6
9% at<111>ori.
7.45
cz
Ø2" x 0.5
a=8.083 Å
 
 
 
 
 
10x10x0.5
 
 
 
 
 
Ø2”
1 or 2 sides epi polished
ZnO
Hexag.
1975
5.605
2.2% at<0001>ori.
2.9
Hydro-thermal
20x20x0.5
a=3.325 Å
 
 
 
 
20mm
1 or 2 sides epi polished
c=5.213 Å
 
 
 
 
Ø3“
10x10x0.3,5x5x0.3
Hexagonal
 
6.15
 
5.59
 
10x10x0.475
a=4.758 Å
 
 
 
 
 
5x5x0.475
 
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