Silicon Carbide Wafers(SiC wafer)
SiC waferPWAM offers semiconductor materials, especially for SiC wafer, SiC substate of polytype 4H and 6H in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology, established a production line to manufacturer SiC substrate and SiC wafer. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China's Semiconductor Lab, we are devoted to continuously improve the quality of SiC wafer, currently substates and develop large size substrates. Our responsibility is to produce the best SiC wafer.
Here shows detail specification:
Download wafer specification hereSILICON CARBIDE MATERIAL PROPERTIES
| Polytype | Single Crystal 4H | Single Crystal 6H |
|---|---|---|
| Lattice Parameters | a=3.076 Å | a=3.073 Å |
| c=10.053 Å | c=15.117 Å | |
| Stacking Sequence | ABCB | ABCACB |
| Band-gap | 3.26 eV | 3.03 eV |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index | no = 2.719 | no = 2.707 |
| ne = 2.777 | ne = 2.755 | |
| Dielectric Constant | 9.6 | 9.66 |
| Thermal Conductivity | 490 W/mK | 490 W/mK |
| Break-Down Electrical Field | 2 – 4 · 108 V/m | 2 – 4 · 108 V/m |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
| Mohs Hardness | ~9 | ~9 |
6H N-TYPE SIC, 2″WAFER SPECIFICATION
| SUBSTRATE PROPERTY | S6H-51-N-PWAM-250 S6H-51-N-PWAM-330 S6H-51-N-PWAM-430 |
|---|---|
| Description | Production Grade 6H SiC Substrate |
| Polytype | 6H |
| Diameter | (50.8 ± 0.38) mm |
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm |
| Carrier Type | n-type |
| Dopant | Nitrogen |
| LResistivity (RT) | 0.02 ~ 0.1 Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM | <50 arcsec |
| Micropipe Density | ≤ 30 cm-2 |
| Surface Orientation | |
| On axis | <0001>± 0.5° |
| Off axis | 3.5° toward <11-20>± 0.5° |
| Primary flat orientation | Parallel {1-100} ± 5° |
| Primary flat length | (16 ± 1.7) mm |
| Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° |
| C-face:90° ccw. from orientation flat ± 5° | |
| Secondary flat length | (8 ± 1.7) mm |
| Surface Finish | Single or double face polished |
| Packaging | Single wafer box or multi wafer box |
| Usable area | ≥ 90 % |
| Edge exclusion | 1 mm |
6H SEMI-INSULATING SIC, 2″WAFER SPECIFICATION
| SUBSTRATE PROPERTY | S6H-51-SI-PWAM-250 S6H-51-SI-PWAM-330 S6H-51-SI-PWAM-430 |
|---|---|
| Description | Production Grade 6H SEMI Substrate |
| Polytype | 6H |
| Diameter | (50.8 ± 0.38) mm |
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm |
| Resistivity (RT) | (90% >1E5 Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM | <50 arcse |
| Micropipe Density | ≤ 50 cm-2 |
| Surface Orientation | |
| On axis | <0001>± 0.5° |
| Off axis | 3.5° toward <11-20>± 0.5° |
| Primary flat orientation | Parallel {1-100} ± 5° |
| Primary flat length | (16 ± 1.7) mm |
| Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° |
| C-face:90° ccw. from orientation flat ± 5° | |
| Secondary flat length | (8 ± 1.7) mm |
| Surface Finish | Single or double face polished |
| Packaging | Single wafer box or multi wafer box |
| Usable area | ≥ 90 % |
| Edge exclusion | 1 mm |
6H N-TYPE SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm SiC wafer
6H N-TYPE SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION: Thickness:330μm/430μm
4H N-TYPE SIC, 2″WAFER SPECIFICATION
| SUBSTRATE PROPERTY | S4H-51-N-PWAM-330 S4H-51-N-PWAM-430 |
|---|---|
| Description | Production Grade 4H SiC Substrate |
| Polytype | 4H |
| Diameter | (50.8 ± 0.38) mm |
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm |
| Carrier Type | n-type |
| Dopant | Nitrogen |
| Resistivity (RT) | 0.012 - 0.0028 Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM | <50 arcsec |
| Micropipe Density | ≤ 30 cm-2 |
| Surface Orientation | |
| On axis | <0001>± 0.5° |
| Off axis | 4°or 8° toward <11-20>± 0.5° |
| Primary flat orientation | Parallel {1-100} ± 5° |
| Primary flat length | (16 ± 1.7) mm |
| Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° |
| C-face:90° ccw. from orientation flat ± 5° | |
| Secondary flat length | (8 ± 1.7) mm |
| Surface Finish | Single or double face polished |
| Packaging | Single wafer box or multi wafer box |
| Usable area | ≥ 90 % |
| Edge exclusion | 1 mm |
4H N-TYPE SIC, 3″WAFER SPECIFICATION
| SUBSTRATE PROPERTY | S4H-76-N-PWAM-330 S4H-76-N-PWAM-430 |
|---|---|
| Description | Production Grade 4H SiC Substrate |
| Polytype | 4H |
| Diameter | (76.2 ± 0.38) mm |
| Thickness | (350 ± 25) μm (430 ± 25) μm |
| Carrier Type | n-type |
| Dopant | Nitrogen |
| Resistivity (RT) | 0.015 - 0.028Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM | <50 arcsec |
| Micropipe Density | ≤ 20 cm-2 |
| TTV/Bow /Warp | ＜25μm |
| Surface Orientation | |
| On axis | <0001>± 0.5° |
| Off axis | 4°or 8° toward <11-20>± 0.5° |
| Primary flat orientation | <11-20>±5.0° |
| Primary flat length | 22.22 mm±3.17mm |
| Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° |
| C-face:90° ccw. from orientation flat ± 5° | |
| Secondary flat length | 11 ± 1.7 mm |
| Surface Finish | Single or double face polished |
| Packaging | Single wafer box or multi wafer box |
| Scratch | None |
| Usable area | ≥ 90 % |
| Edge exclusion | 2mm |
4H N-TYPE SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm
4H N-TYPE SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION: Thickness:330μm/430μm
