>
Ge(Germanium) Single Crystals and WafersPWAM offers semiconductor materials,Ge(Germanium) Single Crystals and Wafers:
General Properties
|
|||
General Properties Structure
|
Cubic, a = 5.6754 Å
|
||
Density: 5.765 g/cm3
|
|||
Melting Point: 937.4 oC
|
|||
Thermal Conductivity: 640
|
|||
Crystal Growth Technology
|
Czochralski
|
|
|
Doping available
|
Undoped
|
Sb Doping
|
Doping In or Ga
|
Conductive Type
|
/
|
N
|
P
|
Resistivity, cm-1
|
>35
|
< 0.05
|
0.05 - 0.1
|
EPD
|
< 4x10^3/cm2
|
< 4x10^3/cm2
|
< 4x10^3/cm2
|
|
|
Crystal Grades and Application
|
|
(please specify when you order) Electronic Grade
|
Used for diodes and transistors
|
Infrared Grade
|
Used for IR optical window
|
Cell Grade
|
Used for substrates of solar cell
|
|
||||
Standard Specs of Ge Crystal and wafers
|
||||
Crystal Orientation
|
<111>,<100> and <110> ± 0.5° or custom orientation
|
|||
Crystal boule as grown
|
1" ~ 5" diameter x 200 mm Length
|
|||
Standard blank as cut
|
1"x 0.5mm
|
2"x0.6mm
|
4"x0.7mm
|
5"&6"x0.8mm
|
Standard Polished wafer(One/two sides polished)
|
1"x 0.30 mm
|
2"x0.5mm
|
4"x0.5mm
|
5"&6"x0.6mm
|
Special size and orientation are available upon requested Ge Wafers
|