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(GaAs) Gallium Arsenide WafersPWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs (Gallium Arsenide) Wafers processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs (Gallium Arsenide) Wafers include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.
We are always dedicated to improve the quality of currently substates and develop large size substrates.
GaAs (Gallium Arsenide) for LED Applications |
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Item
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Specifications
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Remarks
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Conduction Type
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SC/n-type
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SC/p-type with Zn dope Available
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Growth Method
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VGF
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Dopant
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Silicon
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Zn available
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Wafer Diamter
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2, 3 & 4 inch
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Ingot or as-cut availalbe
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Crystal Orientation
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(100)2°/6°/15° off (110) |
Other misorientation available
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OF
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EJ or US
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Carrier Concentration
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(0.4~2.5)E18/cm3
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Resistivity at RT
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(1.5~9)E-3 Ohm.cm
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Mobility
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1500~3000cm2/V.sec
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Etch Pit Density
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<5000/cm2
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Laser Marking
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upon request
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Surface Finish
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P/E or P/P
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Thickness
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220~450um
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Epitaxy Ready
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Yes
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Package
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Single wafer container or cassette
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GaAs (Gallium Arsenide) for LED Applications |
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Item |
Specifications |
Remarks |
Conduction Type |
SC/n-type |
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Growth Method |
VGF |
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Dopant |
Silicon |
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Wafer Diamter |
2, 3 & 4 inch |
Ingot or as-cut available |
Crystal Orientation |
(100)2°/6°/15° off (110) |
Other misorientation available |
OF |
EJ or US |
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Carrier Concentration |
(0.4~2.5)E18/cm3 |
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Resistivity at RT |
(1.5~9)E-3 Ohm.cm |
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Mobility |
1500~3000 cm2/V.sec |
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Etch Pit Density |
<500/cm2 |
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Laser Marking |
upon request |
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Surface Finish |
P/E or P/P |
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Thickness |
220~350um |
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Epitaxy Ready |
Yes |
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Package |
Single wafer container or cassette |
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GaAs (Gallium Arsenide) ,Semi-insulating for Microelectronics Applications |
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Item
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Specifications
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Remarks
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Conduction Type
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Insulating
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Growth Method
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VGF
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Dopant
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Undoped
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Wafer Diamter
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2, 3, 4 & 6 inch
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Ingot available
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Crystal Orientation
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(100)+/- 0.5°
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OF
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EJ, US or notch
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Carrier Concentration
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n/a
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Resistivity at RT
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>1E7 Ohm.cm
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Mobility
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>5000 cm2/V.sec
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Etch Pit Density
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<8000 /cm2
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Laser Marking
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upon request
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Surface Finish
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P/P
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Thickness
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350~675um
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Epitaxy Ready
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Yes
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Package
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Single wafer container or cassette
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For detial specification of p type GaAs (Gallium Arsenide) , please see P Type GaAs Wafer Specs.
For detial specification of special (111) GaAs (Gallium Arsenide) , please see (111) GaAs Wafer Specs.
For GaAs epi wafer growth, please see:GaAs epiwafer and LT-GaAs.