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(111)GaAs Wafer Specification

We offer (111) GaAs wafer for specification, please see below:

111GaAs Wafer Specification 
Parameter
UOM
 
Conduct Type
 
Semi-conducting
Crystal Growth Method
 
VGF
Dopant
 
Si
Diameter
mm
50.8±0.2
Wafer Orientation
 
(111)A toward(110)2 °±0.5°
Primary Flat
 
[1-10] ±0.5°
Primary Flat Length
mm
16±1
Secondary Flat
 
[-1-12] ±0.5°
Secondary Flat Length
mm
7±1
Cc
cm-3
(6.7-40)x10^17
Resistivity (at RT)
ohm.cm
(1-4.09)x10^-3
Mobility
cm2/v.s
1500-2270
Etch Pit Density(EPD)
/cm2
≤480
Laser Marking
 
N/A
Thickness
um
350±25
TTV
um
≤10
TIR
um
≤10
Bow
um
≤10
Warp
um
≤10
Surface
Front
 
Polished
Back
 
Etched
Partical Count
 
50/wafer(for particle>0.3um)
Epi-Ready
 
Yes
Packaging
pcs
Single or Cassette

Also you can see below PDF file: 

(111) GaAs Wafer specification.pdf

Crystal Orientation:

GaAs Wafers are grown from crystal having a regular crystal structure, when cut into wafers, the surface is aligned in one of several relative directions known as crystal orientations. Orientation is defined by the Miller index with (100) or (111) faces being the most common for GaAs. Orientation is important since many of a single crystal's structural and electronic properties are highly anisotropic. Ion implantation depths depend on the wafer's crystal orientation, since each direction offers distinct paths for transport. Wafer cleavage typically occurs only in a few well-defined directions. Scoring the wafer along cleavage planes allows it to be easily diced into individual chips ("dies") so that the billions of individual circuit elements on an average wafer can be separated into many individual circuits.

Source:PAM-XIAMEN

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