2”GaAs Wafer Specification—P type
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Conduct Type
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Semi-conducting
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Crystal Growth Method
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VGF
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Type
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P
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Dopant Zn
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Zn
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Diameter
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50.8±0.4mm
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Orientation
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(100) 0°±0.5°
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Primary Flat
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EJ [0`1`1] ±0.5°
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Primary Flat Length
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16±1
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Secondary Flat
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EJ [0`1 1] ±0.5°
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Secondary Flat Length
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7±1
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Carrier Concentration
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(1-5)E19/cm3
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Resistivity
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N/A
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Mobility
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N/A
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EPD
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<5000 /cm2
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Thickness
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350±25m
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Polishing
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P/E
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Package
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Single wafer box Epi-Ready
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