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Silicon Carbide Crystal (SiC)

What we provide: We are leading SiC crystal supplier, and we can offer Silicon Carbide crystal with 6H and 4H, as well as SiC wafer.

Crystal structure
n type
6H-SiC Wurtzite ( Hexagonal)
4H-SiC Wurtzite ( Hexagonal)
3C-SiC Zinc blende (cubic)
SiC Epi wafer


SiC Wafer

SiC(Silicon Carbide) Crystal are cutted into slices, and polishing, the SiC wafer comes. For specification and details, please visit: Specification of SiC wafer


SiC(Silicon Carbide) Crystal growth

Bulk crystal growth is the technique for fabrication of single crystalline substrates , making the base for further device processing.To have a breakthrough in SiC technology obviously we need production of SiC substrate with a reproducible process.6H- and 4H-SiC(Silicon Carbide) Crystal are grown in graphite crucibles at high temperatures up to 2100—2500°C. The operating temperature in the crucible is provided either by inductive (RF) or resistive heating. The growth occurs on thin SiC seeds. The source represents polycrystalline SiC powder charge. The SiC vapor in the growth chamber mainly consists of three species, namely, Si, Si2C, and SiC2, which are diluted by carrier gas, for example, Argon. The SiC source evolution includes both time variation of porosity and granule diameter and graphitization of the powder granules.


SiC epi wafer

We can cost-effectively produce very high quality epitaxial structures for device or testing purposes.The silicon carbide (SiC) epitaxial wafer poses many advantages in comparision with conventional Si wafers, We can offer epi layer in very large range of doping concentration 1E15/cm3 from low 1014 to 1019 cm-3 for more information, please click:SiC epi wafer


SiC(Silicon Carbide) Crystal Structure

SiC(Silicon Carbide) Crystal has many different crystal structures,which is called polytypes.The most common polytypes of SiC presently being developed for electronics are the cubic 3C-SiC, the hexagonal 4H-SiC and 6H-SiC, and the rhombohedral 15R-SiC. These polytypes are characterized by the stacking sequence of the biatom layers of the SiC structure.For more details, please click SiC(Silicon Carbide) Crystal  Structure


Single crystal SiC Properties

Here we compare property of Silicon Carbide, including Hexagonal SiC,Cubic SiC,Single crystal SiC.For more details, please click: sic properties


SiC(Silicon Carbide) Crystal defects

Most of the defects which were observed in SiC were also observed in other crystalline materials. Like the dislocations, stacking faults (SFs), low angle boundaries (LABs) and twins. Some others appear in materials having the Zing- Blend or the Wurtzite structure, like the IDBs. Micropipes and inclusions from other phases mainly appear in SiC.


SiC(Silicon Carbide) Crystal  application

Many researchers know the general SiC application:III-V Nitride Deposition;Optoelectronic Devices;High Power Devices;High Temperature Devices;High Frequency Power Devices.But few people knows detail applications, We list some detail application and make some explanations,please click below:


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