News

2014-01-14 07:04:37Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers
2014-01-10 07:57:48Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE
2014-01-07 06:28:44Structure and optical properties of MOVPE and HVPE GaN films grown on GaN nanocrystalline powder substrate
2014-01-02 08:48:05Observation of polytype stability in different-impurities-doped 6H–SiC crystals
2013-12-25 07:00:32Preparation and properties of free-standing HVPE grown GaN substrates
2013-12-18 07:17:12Effect of thermal cycling on the adhesion strength of Ti/Ni/Ag films on AlN substrate
2013-12-10 08:38:33AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE
2013-12-05 08:13:10Tunable blue and orange emissions of ZnS:Mn thin films deposited on GaN substrates by pulsed laser deposition
2013-12-04 07:40:30Raman and Time resolved photoluminescence studies on the effect of temperature on disorder production in SHI irradiated N-doped 6H-SiC crystals
2013-11-26 07:27:41Defect distribution in boron-reduced GaAs crystals grown by vapour-pressure-controlled Czochralski technique