News

2015-08-13 02:38:50Reduction of rotational twin formation by indium pre evaporation in epitaxially grown GaAs films on Si (111) substrate
2015-08-10 08:55:34Photoreflectance study of GaN grown on SiN treated sapphire substrate by MOVPE
2015-08-07 02:52:12High temperature processing of poly SiC substrates from the vapor phase for wafer bonding
2015-08-07 02:07:01Large area optical characterization of 3 and 4 inches 4H–SiC wafers
2015-07-31 08:07:22Investigation of structural defects in In doped CdZnTe under different in situ annealing cooling rates
2015-07-22 02:54:41XPS, UV–vis spectroscopy and AFM studies on removal mechanisms of Si-face SiC wafer chemical mechanical polishing (CMP)
2015-07-22 02:47:29Effects of ultra smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers
2015-07-20 07:34:49 Interface characteristics of cubic AlN film on MgO (100) substrate
2015-07-16 06:43:31Laser machining of GaN on diamond wafers
2015-07-14 06:47:08Characterization of 4 in VGF-GaAs single crystals grown in a heater-magnet module