News

2014-03-21 03:44:32144 channel measurement IC for CZT sensors with energy and time resolution
2014-03-17 03:16:08Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates
2014-03-14 07:13:42High performance GaN pin rectifiers grown on free-standing GaN substrates
2014-03-12 03:00:21Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate
2014-03-10 03:24:11On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes
2014-03-07 07:11:53Gallium nitride (GaN) on sapphire substrates for visible LEDs
2014-03-06 02:12:19Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN
2014-03-03 02:05:50Homoepitaxial growth of AlN layers on freestanding AlN substrate by metalorganic vapor phase epitaxy
2014-02-28 08:53:21Structural and optical properties of ultrathin ZnO nanoneedles grown on GaN substrate by hybrid approach
2014-02-26 03:23:06Seeded sublimation growth of 6H and 4H–SiC crystals