News

2015-07-14 06:41:50Effect of silicon on the elastic–plastic transition of GaAs crystal
2015-07-09 08:11:12Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates
2015-07-09 08:06:56Correlation between ZnO nanorod growth and the dislocations in AlN-based substrates
2015-07-07 06:51:59Estimation of bowing in hetero-epitaxial GaN-on-sapphire substrate at elevated temperatures by X-ray diffraction rocking curve measurement
2015-07-07 06:43:53A new growth method of semi-insulating GaN layer for HEMT structure by eliminating degenerate layer at GaN/sapphire interface
2015-07-01 07:28:16The growth of III–V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy
2015-06-29 06:30:41Influence of radiation damage on krypton diffusion in silicon carbide
2015-06-29 06:27:59Chlorinated silicon carbide CVD revisited for polycrystalline bulk growth
2015-06-25 01:42:47Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates
2015-06-25 01:38:03Dislocation glide-controlled room-temperature plasticity in 6H-SiC single crystals