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FS GAN

PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2" SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production.

GaN have a considerable impact on products of next generation due to high-output power and increase efficiency that improve the performance of laser diodes, light-emitting diodes (LED), high-power transistors and other devices.

 

For more information, visit www.qualitymaterial.net or contact:http://www.linkedin.com/in/pwamlulu, e-mail sales@qualitymaterial.net

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