Wafer bonding of 50 mm diameter mirror substrate to AlGaInP light-emitting diode wafer
The feasibility of 50-mm wafer bonding AlGaInP LED with mirror substrate has been demonstrated using a bonding process under a low temperature and short thermal treatment duration. Si substrate with good thermal conductivity is used as the mirror substrate to prevent LED device from joule heating. The performance of the mirror substrate AlGaInP LED is much better than that of the absorbing substrate LED. Good uniformity and performance have been demonstrated for the wafer bonded LED with mirror structure
