>DRIE fabrication of notch-free silicon structures using a novel silicon-on-patterned metal and glass wafer
This paper presents a method of fabricating a silicon structure without notches using a new kind of substrate consisting of silicon-on-patterned metal and glass (SOMG). It has a metal interlayer with a thickness of 0.1 µm between a silicon wafer and glass wafer as an insulation layer to eliminate the micro-charging effect on the insulation surface for the silicon dry etching process. This substrate is fabricated by anodic bonding and polishing. To ascertain the effect of the SOMG substrate, 100 µm deep silicon structures with 5 and 20 µm wide trenches have been etched on SOG (silicon-on-glass) and SOMG substrates under similar conditions. In order to perform the deep silicon etching process, a thick photoresist of AZ9260 is used as a dry etch mask. In the results, no notches are on SOMG, while notches occur on SOG. Also, regardless of the over-etching time as the dimensions of the area to be etched, no notches are formed at the bottom of the silicon structure. This results in a notchless silicon structure. This research shows the feasibility of applying this technique to many applications using silicon devices.
For more information, please visit our website: http://www.qualitymaterial.net,