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semiconductor wafer material news - Xiamen Powerway Advanced Material Co.,Ltd appear on a CompoundSemiconductor.net
Home > News > Xiamen Powerway Advanced Material Co.,Ltd appear on a CompoundSemiconductor.net
Silicon Carbide Crystal (SiC)
GaN substrate
AlN on Sapphire Substrate
GaAs crystal
Germanium substrate
CZT
Semiconductor Materials
Silicon Carbide Wafers
GaAs Wafer
Ge(Germanium) Single Crystals and Wafers
CdZnTe (CZT) Wafer
III-V Nitrides Wafer
GaN Wafer
Silicon Carbide Crystal (SiC)
GaN substrate
AlN on Sapphire Substrate
GaAs crystal
Germanium substrate
CZT
Semiconductor Materials
Silicon Carbide Wafers
GaAs Wafer
Ge(Germanium) Single Crystals and Wafers
CdZnTe (CZT) Wafer
III-V Nitrides Wafer
GaN Wafer

Xiamen Powerway Advanced Material Co.,Ltd appear on a CompoundSemiconductor.net

Xiamen Powerway Advanced Material Co.,Ltd appear on a CompoundSemiconductor.net

Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN) appear in the news feed of the industry leading magazine website: Compoundsemiconductor.net!
For a full article, follow the link: here.

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  • γ-LiAlO2 single crystal: a novel substrate for GaN epitaxy
  • Photoinduced quenching of infrared absorption nonuniformities of large diameter GaAs crystals
  • Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates
  • Transmission electron microscopy study of defect reduction in two-step lateral epitaxial overgrown nonplanar GaN substrate templates
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