Property of Silicon Carbide (SiC)
Comparision of Property of Silicon Carbide, including Hexagonal SiC,Cubic SiC,Single crystal SiC:
Property | Value | Conditions |
Density | 3217 kg/m^3 | hexagonal |
Density | 3210 kg/m^3 | cubic |
Density | 3200 kg/m^3 | Single crystal |
Hardness,Knoop(KH) | 2960 kg/mm/mm | 100g,Ceramic,black |
Hardness,Knoop(KH) | 2745 kg/mm/mm | 100g,Ceramic,green |
Hardness,Knoop(KH) | 2480 kg/mm/mm | Single crystal. |
Young's Modulus | 700 GPa | Single crystal. |
Young's Modulus | 410.47 GPa | Ceramic,density=3120 kg/m/m/m, at room temperature |
Young's Modulus | 401.38 GPa | Ceramic,density=3128 kg/m/m/m, at room temperature |
Thermal conductivity | 350 W/m/K | Single crystal. |
Yield strength | 21 GPa | Single crystal. |
Heat capacity | 1.46 J/mol/K | Ceramic,at temp=1550 C. |
Heat capacity | 1.38 J/mol/K | Ceramic,at temp=1350 C. |
Heat capacity | 1.34 J/mol/K | Ceramic,at temp=1200 C. |
Heat capacity | 1.25 J/mol/K | Ceramic,at temp=1000 C. |
Heat capacity | 1.13 J/mol/K | Ceramic,at temp=700 C. |
Heat capacity | 1.09 J/mol/K | Ceramic,at temp=540 C. |
Electrical resistivity | 1 .. 1e+10 Ω*m | Ceramic,at temp=20 C |
Compressive strength | 0.5655 .. 1.3793 GPa | Ceramic,at temp=25 C |
Modulus of Rupture | 0.2897 GPa | Ceramic,with 1 wt% B addictive |
Modulus of Rupture | 0.1862 GPa | Ceramifc,at room temperature |
Poisson's Ratio | 0.183 .. 0.192 | Ceramic,at room temperature,density=3128 kg/m/m/m |
Modulus of Rupture | 0.1724 GPa | Ceramic,at temp=1300 C |
Modulus of Rupture | 0.1034 GPa | Ceramic,at temp=1800 C |
Modulus of Rupture | 0.07586 GPa | Ceramic,at temp=1400 C |
Tensile strength | 0.03448 .. 0.1379 GPa | Ceramic,at temp=25 C |
*Reference:CRC Materials Science and Engineering Handbook
Comparision of Property of single crystal SiC, 6H and 4H:
Property | Single Crystal 4H | Single Crystal 6H |
Lattice Parameters | a=3.076 Å | a=3.073 Å |
c=10.053 Å | c=15.117 Å | |
Stacking Sequence | ABCB | ABCACB |
Band-gap | 3.26 eV | 3.03 eV |
Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
Refraction Index | no = 2.719 | no = 2.707 |
ne = 2.777 | ne = 2.755 | |
Dielectric Constant | 9.6 | 9.66 |
Thermal Conductivity | 490 W/mK | 490 W/mK |
Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
Mohs Hardness | ~9 | ~9 |
*Reference:Xiamen Powerway Advanced Material Co.,Ltd.
Comparision of property of 3C-SiC,4H-SiC and 6H-SiC:
Si-C Polytype | 3C-SiC | 4H-SiC | 6H-SiC |
Crystal structure | Zinc blende (cubic) | Wurtzite ( Hexagonal) | Wurtzite ( Hexagonal) |
Group of symmetry | T2d-F43m | C46v-P63mc | C46v-P63mc |
Bulk modulus | 2.5 x 1012 dyn cm-2 | 2.2 x 1012 dyn cm-2 | 2.2 x 1012 dyn cm-2 |
Linear thermal expansion coefficient | 2.77 (42) x 10-6 K-1 | ||
Debye temperature | 1200 K | 1300 K | 1200 K |
Melting point | 3103 (40) K | 3103 ± 40 K | 3103 ± 40 K |
Density | 3.166 g cm-3 | 3.21 g cm-3 | 3.211 g cm-3 |
Hardness | 9.2-9.3 | 9.2-9.3 | 9.2-9.3 |
Surface microhardness | 2900-3100 kg mm-2 | 2900-3100 kg mm-2 | 2900-3100 kg mm-2 |
Dielectric constant (static) | ε0 ~= 9.72 | The value of 6H-SiC dielectric constant is usually used | ε0,ort ~= 9.66 |
Infrared refractive index | ~=2.55 | ~=2.55 (c axis) | ~=2.55 (c axis) |
Refractive index n(λ) | n(λ)~= 2.55378 + 3.417 x 104·λ-2 | n0(λ)~= 2.5610 + 3.4 x 104·λ-2 | n0(λ)~= 2.55531 + 3.34 x 104·λ-2 |
ne(λ)~= 2.6041 + 3.75 x 104·λ-2 | ne(λ)~= 2.5852 + 3.68 x 104·λ-2 | ||
Radiative recombination coefficient | 1.5 x 10-12 cm3/s | 1.5 x 10-12 cm3/s | |
Optical photon energy | 102.8 meV | 104.2 meV | 104.2 meV |
Effective electron mass (longitudinal)ml | 0.68mo | 0.677(15)mo | 0.29mo |
Effective electron mass (transverse)mt | 0.25mo | 0.247(11)mo | 0.42mo |
Effective mass of density of states mcd | 0.72mo | 0.77mo | 2.34mo |
Effective mass of the density of states in one valley of conduction band mc | 0.35mo | 0.37mo | 0.71mo |
Effective mass of conductivity mcc | 0.32mo | 0.36mo | 0.57mo |
Effective hall mass of density of state mv? | 0.6 mo | ~1.0 mo | ~1.0 mo |
Lattice constant | a=4.3596 A | a = 3.0730 A | a = 3.0730 A |
b = 10.053 | b = 10.053 |
*Reference: IOFFE
SiC 4H and SiC 6H manufacturer reference:PAM-XIAMEN is the world’s leading developer of solid-state lighting technology,he offer a full line: Sinlge crystal SiC wafer and epitaxial wafer and SiC wafer reclaim.
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