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Electric field breakdown mechanisms in high power epitaxial 4H-SiC p-n junction diodesSilicon carbide (SiC) is an excellent semiconductor for the fabrication of high power and high temperature electronic devices.
SiC pn junctions are critical components of SiC high power devices and circuits. However, the high electric field behavior of
SiC p-n junction structures is not well characterized. The study of the high field breakdown mechanisms of SiC p-n junction
plays an important role in determining the proper design of SiC high power p-n junction-based devices. We have determined
the high field breakdown behaviors of several types of 4H-SiC epitaxial p-n junction diodes of different design. In our efforts
to increase the breakdown voltage, we have found that oxide passivation did not substantially affect the breakdown voltage
but edge termination using argon ion implantation is effective in improving the breakdown voltage of SiC-p-n junction diodes
Source: IEEE
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