News

2018-06-13 03:57:37High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy
2018-06-06 03:03:34Physicists supervise the formation of higher manganese silicide films
2018-05-29 07:08:18Growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well structures by metalorganic chemical vapor deposition and their application to GaN-based solar cells
2018-05-22 07:20:40Diamond proves useful material for growing graphene
2018-05-17 03:17:25Effect of InxGa1−xAs Interlayer on Surface Morphology and Optical Properties of GaSb/InGaAs Type-II Quantum Dots Grown on InP (100) Substrates*
2018-05-14 03:24:30PAM-XIAMEN Offers GaAs LED wafer
2018-05-08 02:42:37New manufacturing process for SiC power devices opens market to more competition
2018-05-04 03:10:45PAM-XIAMEN Offers High Purity Semi-Insulating SiC substrate
2018-04-26 07:15:52The effect of p-doping on multi-state lasing in InAs/InGaAs quantum dot lasers for different cavity lengths
2018-04-20 09:27:52Imec significantly reduces cost of germanium-based thermophotovoltaic cells