News

2019-02-25 09:36:09High yield dicing of anodically bonded silicon glass wafers by pressure induced fracture
2019-02-18 02:52:11Electroluminescence from ZnO nanorod/unetched GaN LED wafers under forward and reverse biases
2019-02-11 02:12:20Raman scattering study of InAs nanowires under high pressure
2019-01-28 02:56:32Defects mediated ferromagnetism in a V-doped 6H—SiC single crystal
2019-01-21 02:36:49Raman spectroscopic characterization of epitaxially grown GaN on sapphire
2019-01-15 08:07:55Energy bandstructure of zinc and cadmium
2019-01-08 06:19:54150 A SiC V-groove trench gate MOSFET with 6 × 6 mm2 chip size on a 150 mm C-face in-house epitaxial wafer
2019-01-03 09:45:40Fabrication and characteristics of porous germanium films
2018-12-17 02:04:14Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates
2018-12-10 07:41:32Field emission and optical studies of photoelectron transport in GaAs crystal