News

2019-05-13 02:48:11Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
2019-05-09 09:14:47Light-induced transverse thermoelectric effect in miscut GaAs single crystals by far-infrared laser illumination
2019-04-29 01:49:08Feasibility study of direct-conversion x-ray detection using cadmium zinc telluride films
2019-04-25 06:43:50DRIE fabrication of notch-free silicon structures using a novel silicon-on-patterned metal and glass wafer
2019-04-16 03:14:10High quality AlGaN grown on a high temperature AIN template by MOCVD
2019-04-03 03:46:43Increased effective reflection and transmission at the GaN-sapphire interface of LEDs grown on patterned sapphire substrates
2019-03-25 08:57:41Experiment on alleviating the bending of CVD-grown heavily Al-doped 4H-SiC epiwafer by codoping of N
2019-03-18 06:33:38Surface passivation of the Ge substrate by novel nitrogen plasma immersion treatment
2019-03-15 02:46:23Deeply bound donor states of interstitial Mn impurity in a GaAs quantum well
2019-03-05 03:45:25Study on temperature dependent resistivity of indium-doped cadmium zinc telluride