News

2019-07-22 03:01:41Heat capacity of germanium crystals with various isotopic composition
2019-07-16 01:52:40Semiconductor Science and Technology The influence of undoped GaN surface flatness on the properties of the blue light-emitting diode wafer
2019-07-08 09:01:41Enhancement of electron spin lifetime in GaAs crystals: The benefits of dichotomous noise
2019-07-03 02:26:26Structural characterization of GaN/AIN layers on 3C-SiC/Si(111) by TEM
2019-06-17 08:23:36Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants
2019-06-13 01:50:06Growth and characterization of stacking fault reduced GaN on sapphire
2019-06-04 09:06:14The optical constants of single crystals of cadmium and zinc
2019-05-29 03:16:07Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation
2019-05-23 09:26:25Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells
2019-05-13 02:48:11Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices