News

2013-03-19 23:30:46Electric field breakdown mechanisms in high power epitaxial 4H-SiC p-n junction diodes
2013-03-13 17:51:51 Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications
2013-03-07 19:42:13Thermal Expansion Coefficients of 6H Silicon Carbide
2013-02-28 18:43:47Cree and Kensai Demonstrate SiC 100 kVA Three-Phase Inverter
2013-02-28 18:10:16Cree Expands Product Offering with Very Low Basal Plane Dislocation 4H Silicon Carbide Epitaxial Wafers
2013-01-14 23:19:34SiC could eclipse diamond in quantum computers
2012-12-07 19:10:40Silicon Carbide Benefits And Advantages
2012-12-06 20:04:27SiC and GaN transistors
2012-12-05 17:55:17Silicon Carbide High-power Devices
2012-11-05 18:25:47The Study of Thermal Oxidation on SiC Surface