News

2013-05-07 22:29:03Epitaxial graphene: How silicon leaves the scene
2013-04-27 14:59:47High quality European GaN-wafer on SiC substrates for space applications
2013-04-24 16:18:05Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond
2013-04-15 15:37:26Deep levels affecting the resistivity in semi-insulating 6H–SiC
2013-04-12 23:21:40Characterization of defect levels in semi-insulating 6H-SiC by means of photoinduced transient spectroscopy and modulated photocurrent technique
2013-04-03 16:16:17Characterization of Undoped and Nitrogen-Doped 4H-SiC Thin Films by CVD from Bis(trimethylsilylmethane) Precursor
2013-04-01 22:00:36Nitrogen doping of epitaxial silicon carbide
2013-03-27 17:43:27The effect of substrate type on SiC nanowire orientation.
2013-03-25 22:24:41Refractive Index and Low-Frequency Dielectric Constant of 6H SiC
2013-03-21 17:29:22 Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]