News

2013-09-04 03:00:58 Young’s Modulus and Poisson’s Ratio of Liquid Phase-Sintered Silicon Carbide
2013-09-03 09:12:12LED wafer and LED wafer templates
2013-09-03 03:21:33Study on Lapping and Constant-Pressure Grinding of Single-Crystal SiC
2013-09-02 08:36:17A Study of the DII Defect after Electron Irradiation and Annealing of 4H SiC
2013-08-30 01:44:31Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers
2013-08-28 02:41:05Photoluminescence Investigation of Defects Created by Electron Bombardment of 4H-SiC
2013-05-24 22:05:39Detail Application of Silicon Carbide
2013-05-16 15:19:06(Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory
2013-05-13 19:58:45XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution
2013-05-09 15:12:42Epitaxial Graphene and Graphene–Based Devices Studied by Electrical Scanning Probe Microscopy