News

2013-10-17 09:02:04Nonuniformities in free-standing GaN substrates
2013-10-16 09:04:55DLTS study of n-type GaN grown by MOCVD on GaN substrates
2013-10-16 08:57:16On mechanisms of sublimation growth of AlN bulk crystals
2013-10-15 08:07:21Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method
2013-10-15 07:56:58Large-depth defect profiling in GaAs wafers after saw cutting
2013-10-14 07:58:44Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate
2013-10-14 07:52:46CZT drift strip detectors for high energy astrophysics
2013-10-12 06:18:54Analysis of sublimation growth of bulk SiC crystals in tantalum container
2013-10-11 07:30:49γ-LiAlO2 single crystal: a novel substrate for GaN epitaxy
2013-10-10 08:15:52Large area GaN substrates