News

2013-10-29 03:32:50Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H2 and N2
2013-10-25 07:14:05GaN substrates for molecular beam epitaxy growth of homoepitaxial structures
2013-10-25 07:04:03Deposition of copper, silver and gold from aqueous solutions onto germanium substrates via galvanic displacement
2013-10-24 07:54:19Fe-doped semi-insulating GaN substrates prepared by hydride vapor-phase epitaxy using GaAs starting substrates
2013-10-24 07:46:10Peculiarities of the track formation in InP and GaAs crystals
2013-10-23 09:56:57Transmission electron microscopy study of defect reduction in two-step lateral epitaxial overgrown nonplanar GaN substrate templates
2013-10-23 08:35:51Surface characterization of 6H-SiC (0001) substrates in indentation and abrasive machining
2013-10-18 08:22:32Characteristics of ZnO/GaN heterostructure formed on GaN substrate by sputtering deposition of ZnO
2013-10-18 08:17:37Numerical simulation of the LEC-growth of GaAs crystals with account of high-pressure gas convection
2013-10-17 09:06:31Relaxation of residual stresses in SiC wafers by annealing