News

2020-01-13 06:57:20Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100) and (111) of Si single crystals and on surfaces of Si films grown on single crystals Al2O3
2020-01-07 02:18:28Modulation of drain current as a function of energies substrate for InP HEMT devices
2019-12-30 06:28:50Effects of Cadmium Impurities on the Electrowinning of Zinc
2019-12-25 01:11:04300 mm SiGe-On-Insulator Substrates with High Ge Content (70%) Fabricated Using the Smart Cut™ Technology
2019-12-16 02:05:31Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES)
2019-12-09 06:58:47Anisotropy of single-crystal 3C–SiC during nanometric cutting
2019-12-02 08:16:13Dependence of the Surface, the Structural, and the Optical Properties on the Thickness of the AIN Buffer Layer for GaN Epilayers Grown on Sapphire Substrates
2019-11-25 02:08:09Influence of cadmium on blood and hair trace elements and biochemical markers
2019-11-18 01:16:01Growth and structure evaluation of strain-relaxed Ge1−xSnx buffer layers grown on various types of substrates
2019-11-11 06:16:13Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO2/GaN-LED wafe