News

2015-11-16 02:57:16Degradation of 0.25 μm GaN HEMTs under high temperature stress test
2015-10-28 08:06:02Improved electrical properties of SiC wafer with defects covered by free standing graphene
2015-10-10 06:59:10Single-crystal atomic layer deposited Y2O3 on GaAs(0 0 1) – growth, structural, and electrical characterization
2015-09-17 02:08:25Effect of nanoporous GaN templates with different pore diameters on the subsequent thick GaN layers by HVPE
2015-09-11 02:23:18Effect of Al substrate nitridation on the properties of AlN films grown by pulsed laser deposition and its mechanism
2015-09-06 02:56:09Formation of definite GaN p–n junction by Mg-ion implantation to n−-GaN epitaxial layers grown on a high-quality free-standing GaN substrate
2015-08-27 02:34:09Wafer warpage, crystal bending and interface properties of 4H-SiC epi-wafers
2015-08-24 02:51:21Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates
2015-08-19 02:13:17Nondestructive three dimensional observation of defects in semi insulating 6H SiC single crystal wafers using a scanning laser microscope (SLM) and infrared light scattering tomography (IR LST)
2015-08-19 02:07:35In situ synthesis and characterization of pure SiC nanowires on silicon wafer