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Silicon Carbide Crystal (SiC)
GaN substrate
AlN on Sapphire Substrate
GaAs crystal
Germanium substrate
CZT
Semiconductor Materials
Silicon Carbide Wafers
GaAs Wafer
Ge(Germanium) Single Crystals and Wafers
CdZnTe (CZT) Wafer
III-V Nitrides Wafer
GaN Wafer
Silicon Carbide Crystal (SiC)
GaN substrate
AlN on Sapphire Substrate
GaAs crystal
Germanium substrate
CZT
Semiconductor Materials
Silicon Carbide Wafers
GaAs Wafer
Ge(Germanium) Single Crystals and Wafers
CdZnTe (CZT) Wafer
III-V Nitrides Wafer
GaN Wafer

News

  • 2016-03-10 08:05:49Spintronics advance brings wafer-scale quantum devices closer to reality
  • 2016-02-03 02:22:45Ultraviolet photoresponse of ZnO nanostructured AlGaN/GaN HEMTs
  • 2016-02-03 02:19:25Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes
  • 2016-01-20 06:07:05Chromium compensated gallium arsenide detectors for X-ray and γ-ray spectroscopic imaging
  • 2016-01-04 09:08:26Properties of GaN layers grown on N-face free-standing GaN substrates
  • 2015-12-24 02:19:42Epitaxial growth of SiC in a single and a multi wafer vertical CVD system: a comparison.
  • 2015-12-18 02:21:13Impact of dielectric parameters on the reflectivity of 3C–SiC wafers with a rough surface morphology in the reststrahlen region
  • 2015-12-11 02:53:51Barrier controlled carrier trapping of extended defects in CdZnTe detector
  • 2015-12-03 02:29:02Determination of the thickness distribution of a graphene layer grown on a 2″ SiC wafer by means of Auger electron spectroscopy depth profiling
  • 2015-11-25 07:07:035 – Low-temperature grown Gallium Arsenide (LT-GaAs) high-speed detectors
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