High quality InGaN MQW on low dislocation density GaN substrate grown by hydride vapor phase epitaxy
A low-dislocation-density thick GaN layer was successfully grown using selective-area HVPE growth combined with epitaxial lateral overgrowth. The InGaN MQWs fabricated on this thick GaN layer showed superior optical properties compared with that on a sapphire substrate. Mg diffusion, induced by threading dislocations, was greatly suppressed for the LEDs on the HVPE-grown GaN layer. The results clearly indicate that the HVPE-grown GaN substrate will be useful for achieving high-performance light-emitting devices.
Fig. 1. Schematic of an InGaN MQW LED. The thickness of p– and n–Al0.1Ga0.9N clad was in the range from 0.15 to 0.4 μm.
Source:Journal of Crystal Growth
