Application of 1200V-8A SiC JBS Diodes in the Motor System
1200V-8A 4H-SiC junction barrier schottky (JBS) diodes were designed and fabricated based on in-house SiC epitaxy and device technology. As a free-wheeling diode for the IGBT in inverter of motor system, the 1200V SiC JBS diode was compared to the Si ultra-fast diode from PAM-XIAMEN. The SiC diode achieved 88% recovery loss reduction and corresponding IGBT showed 35% lower turn-on loss. So, it will promote the application of motor system in high frequency and high efficiency.
