Properties of GaN layers grown on N-face free-standing GaN substrates
GaN layers were homoepitaxially MOCVD grown on N-face free-standing substrates.
A high-quality smooth layer was obtained with optimized growth process.
Epilayers have improved donor-bound exciton recombination time.
GaN layers were homoepitaxially grown on N-face free-standing GaN substrates using a hot-wall metalorganic chemical vapor deposition method. By using optimized growth parameters, layers with a smooth morphology were obtained. The crystalline quality of epilayers was studied by a high resolution X-ray diffraction technique and compared to the substrates. Optical properties of the epilayers studied by low temperature time-resolved photoluminescence have shown longer recombination time for donor-bound exciton compared to the substrates.
- A1. Characterization;
- A2. Metalorganic chemical vapor deposition;
- B1. Nitrides;
- B1. Semiconducting III–V materials;
- Hot-wall epitaxy
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