>Effect of InxGa1−xAs Interlayer on Surface Morphology and Optical Properties of GaSb/InGaAs Type-II Quantum Dots Grown on InP (100) Substrates*
The effects of indium composition in InGaAs interlayer on morphology of GaSb/InGaAs quantum dots (QDs) and on optical properties of GaSb/InGaAs QD material system are studied. AFM images show that the change of the indium composition in InGaAs interlayer can alter the GaSb QD morphology. It is found that low indium composition in InGaAs interlayer can promote the formation of QDs, while high indium composition can inhibit the formation of QDs. The photoluminescence (PL) spectra of GaSb/InGaAs QDs at 8K under low excitation power indicate that the third root of the excitation power is linear with the peak position, which provides a direct evidence for their luminescence belonging to type-II material optical transition. The PL spectra at 8K under an excitation power of 90 mW show that the optical properties of GaSb/InGaAs QD material system can be affected by the indium composition in the InGaAs interlayer, and the PL peak position is linear with the indium composition. The optical properties of GaSb/InGaAs QDs can be improved by adjusting the indium composition in the InGaAs interlayer.
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