single crystals were expected to act as a promising substrate material for the epitaxy of GaN
, the lattice mismatch between LiAlO2
and GaN is only 1.4%. In the present work, γ-LiAlO2
single crystal has been grown using temperature gradient technique (TGT), in which a crucible with a cover was used to prevent the component of charge from vaporizing. The crystal quality was characterized by chemical etching, optical microscope, and high-resolution X-ray diffraction. The LiAlO2
crystal grown by TGT was free from bubbles and inclusions, and the dislocation density measured on (1 0 0) crystal plane was about (3.8–6.0)×104 cm−2. The main defects were subgrains or mosaic structures, which may be caused by the fluctuation of temperature field in the furnace. Growth of GaN on LiAlO2(1 0 0) was tried through MOCVD using H2
as a carrier, the results showed that LiAlO2
substrate was stable enough to stand the high-temperature reductive atmosphere. Since the lattice mismatching between film and substrate was greatly decreased, single-oriented GaN film can be grown on LiAlO2
substrates without using low-temperature buffer layers.