We offer (111) GaAs wafer for specification, please see below:
(111)GaAs Wafer Specification
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Parameter
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UOM
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Conduct Type
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Semi-conducting
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Crystal Growth Method
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VGF
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Dopant
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Si
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Diameter
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mm
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50.8±0.2
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Wafer Orientation
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(111)A toward(110)2 °±0.5°
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Primary Flat
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[1-10] ±0.5°
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Primary Flat Length
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mm
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16±1
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Secondary Flat
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[-1-12] ±0.5°
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Secondary Flat Length
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mm
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7±1
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Cc
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cm-3
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(6.7-40)x10^17
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Resistivity (at RT)
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ohm.cm
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(1-4.09)x10^-3
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Mobility
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cm2/v.s
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1500-2270
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Etch Pit Density(EPD)
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/cm2
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≤480
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Laser Marking
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N/A
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Thickness
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um
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350±25
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TTV
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um
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≤10
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TIR
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um
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≤10
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Bow
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um
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≤10
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Warp
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um
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≤10
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Surface
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Front
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Polished
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Back
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Etched
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Partical Count
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<50/wafer(for particle>0.3um)
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Epi-Ready
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Yes
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Packaging
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pcs
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Single or Cassette
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Also you can see below PDF file:
(111) GaAs Wafer specification.pdf
Crystal Orientation:
GaAs Wafers are grown from crystal having a regular crystal structure, when cut into wafers, the surface is aligned in one of several relative directions known as crystal orientations. Orientation is defined by the Miller index with (100) or (111) faces being the most common for GaAs. Orientation is important since many of a single crystal's structural and electronic properties are highly anisotropic. Ion implantation depths depend on the wafer's crystal orientation, since each direction offers distinct paths for transport. Wafer cleavage typically occurs only in a few well-defined directions. Scoring the wafer along cleavage planes allows it to be easily diced into individual chips ("dies") so that the billions of individual circuit elements on an average wafer can be separated into many individual circuits.
Source:PAM-XIAMEN
If you need more information about (111)GaAs Wafer Specification Adobe Acrobat, please visit:http://www.qualitymaterial.net/ or send us email at sales@qualitymaterial.net