>Determination of the thickness distribution of a graphene layer grown on a 2″ SiC wafer by means of Auger electron spectroscopy depth profiling
The thickness of graphene grown on SiC was determined by AES depth profiling.
The AES depth profiling verified the presence of buffer layer on SiC.
The presence of unsaturated Si bonds in the buffer layer has been shown.
Using multipoint analysis thickness distribution of the graphene on the wafer was determined.
Graphene on SiC; Buffer layer composition; AES depth profiling; Graphene thickness; Sublimation epitaxy
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