Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD
We studied the influence of the growth temperature of AlN nucleation layer (TNL) on the AlN template grown by high-temperature metal-organic chemical vapor deposition (HT-MOCVD). The AlN templates were characterized by high-resolution X-ray diffractometer, atomic force microscopy and room-temperature Raman scattering spectrometer. The results revealed that the TNL
had a direct influence on the quality of the AlN template. By optimizing the TNL
at 950 °C, we obtained a high-quality AlN template with the full width at half maxima for the (0002) and (10–12) planes of 90″ and 612″, respectively. The AlN template also presented atomic level step with a root mean square (RMS) roughness of 0.133 nm. In addition, it performed excellent single crystallographic orientation along the c-axis. The growth evolution of AlN nucleation layer at different TNL
was also explained in detail.
• The influence of AlN nucleation layer growth temperature on the crystallographic defects of high-temperature AlN was investigated.
• The optimized growth evolution of AlN template was proposed.
• The crystallographic orientation influenced by the growth temperature of AlN nucleation layer was studied by Raman scattering spectrum.
Fig. 1. The relationship between TNL and FWHM values of (0002) and (10–12) planes of AlN templates.