PAM-XIAMEN Offer GaAs Epi Wafer

Xiamen Powerway Advanced material Co.,Ltd.(PAM-XIAMEN),a leader in providing Indium Phosphide (InP) and Gallium Arsenide (GaAs) epitaxial wafers to electronics and optoelectronics industries with its advanced growth monitoring technology, has manufactured various types of III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply GaAs epiwafer of custom structures to meet customer specifications, size from 2" to 6". please contact us for more product information or discuss a specific epi layer structure:

GaAs Epi product line

GaAs PIN epi wafer

GaAs HBT epi wafer

Generic pHEMT (GaAs, AlGaAs, InGaAs)

Metal-semiconductor field effect transistor (MESFET)

GaAs mHEMT epi wafer (mHEMT: metamorphic high electron mobility transistor)

GaAs Based Epitaxial Wafer for LED and LD

LT-GaAs epi layer on GaAs substrate

Heterojunction field effect transistor (HFET)

High electron mobility transistor (HEMT)

Pseudomorphic high electron mobility transistor (pHEMT)

Resonant tunnel diode （RTD）

PiN diode

hall effect devices

variable capacitance diode （VCD）

For GaAs pHEMT, two-dimensional electron gas (2DEG) concentrations we can offered is (1.7~3.4)x 10¹²cm^-2