PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2" SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production.
GaN have a considerable impact on products of next generation due to high-output power and increase efficiency that improve the performance of laser diodes, light-emitting diodes (LED), high-power transistors and other devices.
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