Hydrogen Implantation and Annealing-Induced Exfoliation Process in SiC Wafers with Various Crystal Orientations

The influence of time and temperature were investigated in wafer exfoliation process by hydrogen implantation for 4H-SiC wafers with various orientations, on-axis and 8° off-axis (0001), (1100), and (1120). Void formation occurs isotropically for all the orientations investigated. The blistering rate (R) of 4H-SiC was found to be dependent on the crystal orientation of the wafer; RSiC(0001)on-axis \lesssim RSiC(0001)8°off-axis \lesssim RSiC(1100) < RSiC(1120). The blistering rate of (1120) is faster than those of the other three orientations. This result suggests that different annealing conditions are needed when fabricating SiC-on-insulator wafers of different crystal orientations.

Source:IOPscience

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