Gallium nitride (GaN) on sapphire substrates for visible LEDs
This chapter describes GaN epitaxial materials grown on sapphire substrates since they are a very important technological platform for visible light-emitting diodes (LEDs) and solid-state lighting technology. The chapter begins with the historical background of GaN material development and describes the fundamental properties of sapphire as a substrate for the epitaxial growth of GaN. The chapter then discusses fundamental, technical and economic aspects of GaN on sapphire, relevant for LEDs, including strained heteroepitaxial growth, epitaxial overgrowth and non-polar and semi-polar GaN growth, followed by a brief outlook of LEDs based on GaN on sapphire.
Source:sciencedirect
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- Formation of definite GaN p–n junction by Mg-ion implantation to n−-GaN epitaxial layers grown on a high-quality free-standing GaN substrate
- Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond
- Ferromagnetism at room temperature of c- and m-plane GaN : Gd films grown on different substrates by reactive molecular beam epitaxy
- Optical erosion of germanium single crystals caused by CO2 laser pulses
