Structure and magnetic properties of Fe epitaxial thin films prepared by UHV rf magnetron sputtering on GaAs single-crystal substrates

Fe thin films were prepared on GaAs single-crystal substrates of (100)_B3, (110)_B3, and (111)_B3 orientations by ultra high vacuum rf magnetron sputtering. The effects of substrate orientation and substrate temperature on the film growth, the structure, and the magnetic properties were investigated. On GaAs(100)_B3 substrates, Fe(100)_bcc single-crystal films are obtained at 300 °C, whereas Fe films consisting of bcc(100) and bcc(221) crystals epitaxially grow at room temperature (RT). Fe(110)_bcc and Fe(111)_bcc single-crystal films are respectively obtained on GaAs(110)_B3 and GaAs(111)_B3 substrates at RT–300 °C. The in-plane lattice spacings of these Fe epitaxial films are 0–9% larger than the out-of-plane lattice spacings due to accommodation of lattice mismatch between the films and the substrates. The film strain is decreased by employing an elevated substrate temperature of 300 °C. The in-plane magnetization properties are reflecting the magnetocrystalline anisotropy of bulk bcc–Fe crystal.

• Fe thin film; 
• Epitaxial growth; 
• Single-crystal substrate; 
• GaAs(100); 
• GaAs(110); 
• GaAs(111); 
• Magnetron   
•  
•  
•  
•  




• Source:Sciencedirect    
•  
•  

If you need more information about sic wafer, please visit:http://www.qualitymaterial.net or send us email at sales@qualitymaterial.net.