AlN on Sapphire Substrate

What we provide:

We offer single crystalline AlN on Sapphire Substrate on c-plane sapphire template,which is also called AlN wafer or AlN template,for UV LEDs, semiconductor devices and AlGaN epitaxial growth.Our epi-ready, C-plane AlN on Sapphire Substrate have good XRD FWHM or dislocation density. The available thickness is from 30nm to 5um.Our single crystal Aluminum Nitride substrates with low dislocation has widely application:including UV LED,detectors, IR seekers windows, epitaxial growth of III-nitrides,Laser, RF transistors and other semiconductor device.

Specification of AlN on Sapphire Substrate

2”AlN Epitaxy on Sapphire Templates
Item	PAM-AlNT-SI
Conduction Type	semi-insulating
Diameter	Ф 50.8mm ± 1mm
Thickness:	(30nm-5um)+/- 10%
Substrate:	sapphire
Orientation :	C-axis(0001)+/-1O
Orientation Flat	A-plane
XRD FWHM of (0002)	<200 arcsec.
Useable Surface Area	≥90%
Polishing:	Single side Polished,epi-ready

Properties of AlN on Sapphire Substrate

PROPERTY / MATERIAL	Cubic (Beta) AlN	Hexagonal (Alpha) AlN
.	.	.
Structure	Zinc Blende	Wurzite
Space Group	F bar4 3m	C⁴_6v ( = P6_3mc)
Stability	Meta-stable	Stable
Lattice Parameter(s) at 300K	0.436 nm	a0=0.3111 nm
Lattice Parameter(s) at 300K	0.436 nm	c0 = 0.4978 nm
Density at 300K	3.285 g.cm^-3	3.255 g.cm^-3
Elastic Moduli at 300 K	. . .	. . .
Linear Therm. Expansion Coeff.	. . .	Along a0: 5.3x10^-6 K^-1
at 300 K	. . .	Along c0: 4.2x10^-6 K^-1
Calculated Spontaneous Polarisations	Not Applicable	– 0.081 C m^-2
		Bernardini et al 1997
		Bernardini & Fiorentini 1999
Calculated Piezo-electric Coefficients	Not Applicable	e33 = + 1.46 C m^-2
		e31 = – 0.60 C m^-2
		Bernardini et al 1997
		Bernardini & Fiorentini 1999
Phonon Energies	. . .	. . .
	. . .	Units: Wcm^-1K^-1
		.
		.
Thermal Conductivity		Tansley et al 1997b
near 300K		.
		3.0 to 3.3
		for thick, free-standing AlN
		Florescu et al, 2001
Melting Point	. . .	. . .. K
Dielectric Constant	. . .	Mean = 9.14
at Lowish Frequency	. . .	Mean = 9.14
Refractive Index	. . .	2.15±0.05 at 3eV
Refractive Index	. . .	Tansley et al 1997b
Nature of Energy Gap Eg	Direct	Direct
Energy Gap Eg at 300 K	. . . eV	6.2 eV
		Yoshida et al 198
		Vurgaftman et al (2001)
Energy Gap Eg at 5 K	. . .	6.28 eV
Energy Gap Eg at 5 K	. . .	Vurgaftman et al (2001)
Intrinsic Carrier Conc. at 300 K	. . .	. . .
Ionisation Energy of . . . Donor	. . . .	. . .
Electron Mobility at 300 K	. . .	. . .
for n= . .	. . .	. . .
Electron Mobility at 77 K	. . . .	. . .
for n= . .	. . . .	. . .
Ionisation Energy of . . . Acceptor	. . .	. . .
Hole Mobility at 300 K	. . . .	. . . .
for p= . .	. . . .	. . . .
Hole Mobility at 77 K	. . . .	. . .
for p=. . .	. . . .	. . .
.	Cubic (Beta) AlN	Hexagonal (Alpha) AlN